Optical Content Addressable Memory Matchline for 2-bit Address Look-Up at 10 Gb/s

We demonstrate the first experimental evaluation of a 10Gb/s optical matchline (ML) memory architecture that designates successfully whether an incoming 2-bit optical address is identical to the optical address stored in an optical content addressable memory (CAM) line. The optical CAM line is forme...

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Bibliographic Details
Published in:IEEE photonics technology letters 2018-05, Vol.30 (9), p.809-812
Main Authors: Mourgias-Alexandris, G., Vagionas, C., Tsakyridis, A., Maniotis, P., Pleros, N.
Format: Article
Language:English
Subjects:
Adaptive optics
content addressable memories
InP monolithic integration
optical look-up
Optical memories
Optical packet switching
Optical sensors
Optical switches
photonic integrated circuits
Semiconductor optical amplifiers
Stimulated emission
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Summary:We demonstrate the first experimental evaluation of a 10Gb/s optical matchline (ML) memory architecture that designates successfully whether an incoming 2-bit optical address is identical to the optical address stored in an optical content addressable memory (CAM) line. The optical CAM line is formed by two optical CAM cells, with every cell comprising a monolithically integrated InP flip-flop and an SOA-MZI-based XOR gate, while the ML is completed by a subsequent wavelength multiplexing element and a semiconductor optical amplifier-cross gain modulation gate. Error-free operation at 10Gb/s has been obtained for 2-bit optical addresses and for both content addressing and write memory functionalities.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2018.2817928