Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel

• Published in: IEEE transactions on electron devices 2018-05, Vol.65 (5), p.1862-1868
• Main Authors: Kim, Seong Kwang, Shim, Jae-Phil, Geum, Dae-Myeong, Kim, Jaewon, Kim, Chang Zoo, Kim, Han-Sung, Song, Jin Dong, Choi, Sung-Jin, Kim, Dae Hwan, Choi, Won Jun, Kim, Hyung-Jun, Kim, Dong Myong, Kim, Sanghyeon
• Format: Article
• Language: English
• Subjects: compound semiconductor; Doping; Epitaxial growth; epitaxial lift-off (ELO); III–V; Indium gallium arsenide; InGaAs; InGaAs-OI; Logic gates; monolithic 3-D (M3D); MOSFET; MOSFETs; Silicon; Substrates; wafer bonding; wafer reuse
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2018.2810304

In this paper, we fabricated In 0.53 Ga 0.47 As-on insulator (OI) MOSFETs on Si substrates with different doping types to mimic ground plane doping using direct wafer bonding and epitaxial lift-off (ELO) techniques. We investigated the impact of doping types on the ground plane and the backgate biasing, which are important and preferable components in monolithic 3-D (M3D) integration, on the electrical properties of MOSFETs, such as the threshold voltage ( {V} _{T} ) and the effective mobility ( \mu _{\textsf {eff}} ). It was found that {V} _{T} and \mu _{\textsf {eff}} were significantly modulated by the backsubstrate doping and the backbiasing. These observations were explained by the change of carrier distributions, which were confirmed by technology computer-aided design simulation. Furthermore, we investigated the reusability of InP donor substrates for sequential epitaxial growth after ELO process toward a cost-effective M3D integration with the In 0.53 Ga 0.47 As channel.