Electrical Probing Test for Characterizing Wideband Optical Transceiving Devices with Self-Reference and On-Chip Capability

An electrical probing test method is proposed based on serial or parallel modulation mixing scheme for characterizing wideband optical transceiving devices including high-speed semiconductor laser diodes, electro-absorption modulators, photodetectors, and Mach-Zehnder modulators. The method enables...

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Bibliographic Details
Published in:Journal of lightwave technology 2018-10, Vol.36 (19), p.4326-4336
Main Authors: Zhang, Shangjian, Wang, Heng, Zou, Xinhai, Zhang, Chong, Zhang, Yali, Zhang, Zhiyao, Liu, Yong, Peters, Jon D., Bowers, John E.
Format: Article
Language:English
Subjects:
Adaptive optics
Broadband
Electro-absorption modulators
Electroabsorption modulators
Frequency modulation
frequency response
High-speed optical techniques
Mach-Zehnder interferometers
Mach-Zehnder modulators
microwave photonics
Modulation
Optical devices
Optical mixing
Optical modulation
parallel modulation mixing
photodetectors
Photometers
Product development
Semiconductor lasers
Semiconductors
serial modulation mixing
Test procedures
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Description
Summary:An electrical probing test method is proposed based on serial or parallel modulation mixing scheme for characterizing wideband optical transceiving devices including high-speed semiconductor laser diodes, electro-absorption modulators, photodetectors, and Mach-Zehnder modulators. The method enables self-referenced frequency responses measurement, such as modulation index of semiconductor laser diodes, modulation index of electro-absorption modulators, responsivity of photodetectors, and modulation index and half-wave voltage of dual-parallel Mach-Zehnder modulators, dual-drive Mach-Zehnder modulators, and push-pull Mach-Zehnder modulators. In the demonstration, the experimental results are compared to those obtained with the conventional optical or electrical methods for accuracy. The full-electrical test nature is promising for microwave characterization of wafer level devices and circuits with fully integrated transceiving components on chip.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2018.2822944