High power tensile-strained GaAsP-AlGaAs quantum well diode lasers emitting between 718 nm and 735 nm

Summary form only given. Several important applications in medicine, spectroscopy and pumping of fs solid-state lasers like Cr:LiSAF require wavelengths in the 700-750 nm range. The use of a tensile strained GaAsP QW embedded in an AlGaAs waveguide is a promising design for high power lasers in this...

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Bibliographic Details
Main Authors: Erbert, G., Bugge, F., Knauer, A., Maege, J., Sebastian, J., Thies, A., Wenzel, H., Weyers, M., Trankle, G.
Format: Conference Proceeding
Language:English
Subjects:
Diode lasers
Laser excitation
Optical design
Power lasers
Pump lasers
Quantum well lasers
Solid lasers
Spectroscopy
Threshold current
Waveguide lasers
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Summary:Summary form only given. Several important applications in medicine, spectroscopy and pumping of fs solid-state lasers like Cr:LiSAF require wavelengths in the 700-750 nm range. The use of a tensile strained GaAsP QW embedded in an AlGaAs waveguide is a promising design for high power lasers in this wavelength range, combining the advantages of an Al-free QW with the established growth and processing techniques for AlGaAs based lasers. Lower threshold current densities and higher internal efficiencies in comparison to compressively-strained InAlGaAs/AlGaAs and InGaAsP/InAlGaP structures, respectively, were demonstrated.
DOI:10.1109/CLEO.1999.833853