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High power tensile-strained GaAsP-AlGaAs quantum well diode lasers emitting between 718 nm and 735 nm
Summary form only given. Several important applications in medicine, spectroscopy and pumping of fs solid-state lasers like Cr:LiSAF require wavelengths in the 700-750 nm range. The use of a tensile strained GaAsP QW embedded in an AlGaAs waveguide is a promising design for high power lasers in this...
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| creator | Erbert, G. Bugge, F. Knauer, A. Maege, J. Sebastian, J. Thies, A. Wenzel, H. Weyers, M. Trankle, G. |
| description | Summary form only given. Several important applications in medicine, spectroscopy and pumping of fs solid-state lasers like Cr:LiSAF require wavelengths in the 700-750 nm range. The use of a tensile strained GaAsP QW embedded in an AlGaAs waveguide is a promising design for high power lasers in this wavelength range, combining the advantages of an Al-free QW with the established growth and processing techniques for AlGaAs based lasers. Lower threshold current densities and higher internal efficiencies in comparison to compressively-strained InAlGaAs/AlGaAs and InGaAsP/InAlGaP structures, respectively, were demonstrated. |
| doi_str_mv | 10.1109/CLEO.1999.833853 |
| format | conference_proceeding |
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Several important applications in medicine, spectroscopy and pumping of fs solid-state lasers like Cr:LiSAF require wavelengths in the 700-750 nm range. The use of a tensile strained GaAsP QW embedded in an AlGaAs waveguide is a promising design for high power lasers in this wavelength range, combining the advantages of an Al-free QW with the established growth and processing techniques for AlGaAs based lasers. Lower threshold current densities and higher internal efficiencies in comparison to compressively-strained InAlGaAs/AlGaAs and InGaAsP/InAlGaP structures, respectively, were demonstrated.</description><identifier>ISBN: 9781557525956</identifier><identifier>ISBN: 1557525951</identifier><identifier>DOI: 10.1109/CLEO.1999.833853</identifier><language>eng</language><publisher>IEEE</publisher><subject>Diode lasers ; Laser excitation ; Optical design ; Power lasers ; Pump lasers ; Quantum well lasers ; Solid lasers ; Spectroscopy ; Threshold current ; Waveguide lasers</subject><ispartof>Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. 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Lower threshold current densities and higher internal efficiencies in comparison to compressively-strained InAlGaAs/AlGaAs and InGaAsP/InAlGaP structures, respectively, were demonstrated.</description><subject>Diode lasers</subject><subject>Laser excitation</subject><subject>Optical design</subject><subject>Power lasers</subject><subject>Pump lasers</subject><subject>Quantum well lasers</subject><subject>Solid lasers</subject><subject>Spectroscopy</subject><subject>Threshold current</subject><subject>Waveguide lasers</subject><isbn>9781557525956</isbn><isbn>1557525951</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1999</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNp9jrEKwjAURQMiKNpdnN4PtDamaZtRpOog6OAukT41kqY1SSn-vRWdPcs5cJdLyIzGEaWxWKz3xSGiQogoZyznbEACkeWU84wvueDpiATOPeKehNMkTcYEd-p2h6bu0IJH45TG0HkrlcEStnLljuFKfwzPVhrfVtCh1lCqukTQ0qF1gJXyXpkbXNB3iAYymoOpQJoSMsb7nJLhVWqHwc8TMt8Up_UuVIh4bqyqpH2dv5_Z3_ENE2REog</recordid><startdate>1999</startdate><enddate>1999</enddate><creator>Erbert, G.</creator><creator>Bugge, F.</creator><creator>Knauer, A.</creator><creator>Maege, J.</creator><creator>Sebastian, J.</creator><creator>Thies, A.</creator><creator>Wenzel, H.</creator><creator>Weyers, M.</creator><creator>Trankle, G.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>1999</creationdate><title>High power tensile-strained GaAsP-AlGaAs quantum well diode lasers emitting between 718 nm and 735 nm</title><author>Erbert, G. ; Bugge, F. ; Knauer, A. ; Maege, J. ; Sebastian, J. ; Thies, A. ; Wenzel, H. ; Weyers, M. ; Trankle, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_8338533</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Diode lasers</topic><topic>Laser excitation</topic><topic>Optical design</topic><topic>Power lasers</topic><topic>Pump lasers</topic><topic>Quantum well lasers</topic><topic>Solid lasers</topic><topic>Spectroscopy</topic><topic>Threshold current</topic><topic>Waveguide lasers</topic><toplevel>online_resources</toplevel><creatorcontrib>Erbert, G.</creatorcontrib><creatorcontrib>Bugge, F.</creatorcontrib><creatorcontrib>Knauer, A.</creatorcontrib><creatorcontrib>Maege, J.</creatorcontrib><creatorcontrib>Sebastian, J.</creatorcontrib><creatorcontrib>Thies, A.</creatorcontrib><creatorcontrib>Wenzel, H.</creatorcontrib><creatorcontrib>Weyers, M.</creatorcontrib><creatorcontrib>Trankle, G.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Erbert, G.</au><au>Bugge, F.</au><au>Knauer, A.</au><au>Maege, J.</au><au>Sebastian, J.</au><au>Thies, A.</au><au>Wenzel, H.</au><au>Weyers, M.</au><au>Trankle, G.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>High power tensile-strained GaAsP-AlGaAs quantum well diode lasers emitting between 718 nm and 735 nm</atitle><btitle>Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013)</btitle><stitle>CLEO</stitle><date>1999</date><risdate>1999</risdate><spage>44</spage><epage>45</epage><pages>44-45</pages><isbn>9781557525956</isbn><isbn>1557525951</isbn><abstract>Summary form only given. Several important applications in medicine, spectroscopy and pumping of fs solid-state lasers like Cr:LiSAF require wavelengths in the 700-750 nm range. The use of a tensile strained GaAsP QW embedded in an AlGaAs waveguide is a promising design for high power lasers in this wavelength range, combining the advantages of an Al-free QW with the established growth and processing techniques for AlGaAs based lasers. Lower threshold current densities and higher internal efficiencies in comparison to compressively-strained InAlGaAs/AlGaAs and InGaAsP/InAlGaP structures, respectively, were demonstrated.</abstract><pub>IEEE</pub><doi>10.1109/CLEO.1999.833853</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 9781557525956 |
| ispartof | Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013), 1999, p.44-45 |
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| language | eng |
| recordid | cdi_ieee_primary_833853 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Diode lasers Laser excitation Optical design Power lasers Pump lasers Quantum well lasers Solid lasers Spectroscopy Threshold current Waveguide lasers |
| title | High power tensile-strained GaAsP-AlGaAs quantum well diode lasers emitting between 718 nm and 735 nm |
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