High-accuracy modelling of ZVS energy loss in advanced power transistors

Two simulation approaches for prediction of energy loss in high-voltage power transistors (∼600V) operating under ZVS (Zero-Voltage-Switching) and near-ZVS conditions are presented and proved by experiment in this work. The first approach is based on finite-element simulation whereas the second one...

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Bibliographic Details
Main Authors: Roig, Jaume, Gomez, German, Bauwens, Filip, Vlachakis, Basil, Rogina, Maria R., Rodriguez, Alberto, Lamar, Diego G.
Format: Conference Proceeding
Language:English
Subjects:
Computational modeling
Energy loss
Gallium nitride
MOSFET
Semiconductor device modeling
SPICE
Zero voltage switching
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Summary:Two simulation approaches for prediction of energy loss in high-voltage power transistors (∼600V) operating under ZVS (Zero-Voltage-Switching) and near-ZVS conditions are presented and proved by experiment in this work. The first approach is based on finite-element simulation whereas the second one proposes a new SPICE model. Different from prior works, both models feature COSS hysteresis and related energy loss, thus showing high precision in replicating waveforms and energy loss for real tests in the primary-side of LLC resonant converters.
ISSN:2470-6647
DOI:10.1109/APEC.2018.8341020