Investigations on circuits and layout for non-intrusive switch current measurements in high frequency converters using parallel GaN HEMTs

• Main Authors: Nibir, Shahriar Jalal, Fregosi, Daniel, Parkhideh, Babak
• Format: Conference Proceeding
• Language: English
• Subjects: AMR; Current measurement; current sensor; Gallium nitride; GaN; Magnetic sensors; Magnetoresistor; power electronics; Switches; Switching circuits; Transistors
• ISSN: 2470-6647
• DOI: 10.1109/APEC.2018.8341405

Recent developments in wide-bandgap semiconductor based power switches have made GaN HEMTs (High Electron Mobility Transistors) one of the most popular choices for different power electronics applications. Due to the relatively lower current ratings of the available GaN devices in the market, parallel configurations of GaN transistors are required for high frequency high power applications. In this work, we demonstrate a contactless switch current measurement technique based on Magnetoresistive (MR) sensors in a synchronous buck converter using GaN transistors in a parallel configuration. We have discussed the design considerations for the optimal design of the power electronic converter and contactless switch current sensing method in detail. We have demonstrated through experiments the performance of the contactless current sensing method in measuring the active and synchronous switch currents in the designed power electronic converter with parallel GaN transistors.