Utilizing large hall offset voltage for conversion free 4H-SiC strain sensor

This work presents a conversion free p-type 4H silicon carbide (4H-SiC) four-terminal strain sensor utilizing a large Hall offset voltage in a symmetric four-terminal configuration. Upon the application of mechanical strain, a high sensitivity of 209 mV/A/ppm was obtained. The strain sensor also exh...

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Bibliographic Details
Main Authors: Nguyen, Tuan-Khoa, Phan, Hoang-Phuong, Han, Jisheng, Dinh, Toan, MdFoisal, Abu Riduan, Zhu, Yong, Nguyen, Nam-Trung, Dao, Dzung Viet
Format: Conference Proceeding
Language:English
Subjects:
Capacitive sensors
Monitoring
Sensitivity
Silicon carbide
Strain
Temperature sensors
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Summary:This work presents a conversion free p-type 4H silicon carbide (4H-SiC) four-terminal strain sensor utilizing a large Hall offset voltage in a symmetric four-terminal configuration. Upon the application of mechanical strain, a high sensitivity of 209 mV/A/ppm was obtained. The strain sensor also exhibited good repeatability and linearity with a significantly large offset voltage in the induced strain ranging from 0 to 334ppm. Coupled these performances with the excellent mechanical strength, electrical conductivity, thermal stability, and chemical inertness of the SiC material, the proposed 4H-SiC strain sensor is promising for stress/strain monitoring for harsh operating environments with high signal-to-noise ratio.
ISSN:2160-1968
DOI:10.1109/MEMSYS.2018.8346697