Evaluation methodology for current collapse phenomenon of GaN HEMTs

Methods of both evaluation and analysis of current collapse (C/C) in GaN HEMTs are discussed. Recently, guidelines to the methods of evaluation of C/C in comparing device characteristics have been required as the increase in on-resistance resulting from C/C depends significantly on stress conditions...

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Bibliographic Details
Main Authors: Sugiyama, Toru, Oasa, Kohei, Saito, Yasunobu, Yoshioka, Akira, Kikuchi, Takuo, Shindome, Aya, Ohguro, Tatsuya, Hamamoto, Takeshi
Format: Conference Proceeding
Language:English
Subjects:
Current collapse
Evaluation method
GaN transistors
High electron mobility
Inductance load switching
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Summary:Methods of both evaluation and analysis of current collapse (C/C) in GaN HEMTs are discussed. Recently, guidelines to the methods of evaluation of C/C in comparing device characteristics have been required as the increase in on-resistance resulting from C/C depends significantly on stress conditions and the applied method. Therefore, as a guideline, we propose the DC voltage stress and inductance load switching stress for the evaluation.
ISSN:1938-1891
DOI:10.1109/IRPS.2018.8353559