BOX breakdown: A novel defect mode in a 14nm SOI FinFET technology

Unpredictable defect modes are predictably common to semiconductor manufacturing. These defects are often hard to detect, require significant innovation to resolve, and have a significant impact on product yield or reliability. Here we present a defect manifesting as an electrostatic breakdown of th...

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Bibliographic Details
Main Authors: Rettmann, Ryan, McCormack, Tim, Patterson, Oliver D., Lin, Hong, Nummy, Karen, Poindexter, Dan, Parries, Paul
Format: Conference Proceeding
Language:English
Subjects:
Dielectric breakdown
FinFETs
Inspection
Planarization
Plasmas
Substrates
Online Access:Request full text
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Summary:Unpredictable defect modes are predictably common to semiconductor manufacturing. These defects are often hard to detect, require significant innovation to resolve, and have a significant impact on product yield or reliability. Here we present a defect manifesting as an electrostatic breakdown of the buried oxide layer for, a 14nm FinFET technology. Detection, root cause analysis, and resolution is discussed, including process modifications to eliminate the defect.
ISSN:2376-6697
DOI:10.1109/ASMC.2018.8373220