BOX breakdown: A novel defect mode in a 14nm SOI FinFET technology

Unpredictable defect modes are predictably common to semiconductor manufacturing. These defects are often hard to detect, require significant innovation to resolve, and have a significant impact on product yield or reliability. Here we present a defect manifesting as an electrostatic breakdown of th...

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Main Authors: Rettmann, Ryan, McCormack, Tim, Patterson, Oliver D., Lin, Hong, Nummy, Karen, Poindexter, Dan, Parries, Paul
Format: Conference Proceeding
Language:English
Subjects:
Dielectric breakdown
FinFETs
Inspection
Planarization
Plasmas
Substrates
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creator Rettmann, Ryan
McCormack, Tim
Patterson, Oliver D.
Lin, Hong
Nummy, Karen
Poindexter, Dan
Parries, Paul
description Unpredictable defect modes are predictably common to semiconductor manufacturing. These defects are often hard to detect, require significant innovation to resolve, and have a significant impact on product yield or reliability. Here we present a defect manifesting as an electrostatic breakdown of the buried oxide layer for, a 14nm FinFET technology. Detection, root cause analysis, and resolution is discussed, including process modifications to eliminate the defect.
doi_str_mv 10.1109/ASMC.2018.8373220
format conference_proceeding
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source IEEE Xplore All Conference Series
subjects Dielectric breakdown
FinFETs
Inspection
Planarization
Plasmas
Substrates
title BOX breakdown: A novel defect mode in a 14nm SOI FinFET technology
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