The application of non-volatile look-up-table operations based on multilevel-cell of resistance switching random access memory

Resistance switching random access memory (RRAM) is deemed as an emerging memory which has drawn considerable attention. This paper presents an approach for the synthesis of multilevel-cell (MLC) RRAM-based circuits using look-up-table (LUT) operations to complete a multiplication procedure. The rec...

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Bibliographic Details
Main Authors: Zhang, Feng, Fan, Dong-Yu, Lin, Qi-Peng, Huo, Qiang, Li, Yun, Dai, Lan, Chen, Cheng-Ying, Shen, Hai-Hua
Format: Conference Proceeding
Language:English
Subjects:
computing-in-momery
Decoding
Delays
Look-up-table (LUT)
multilevel-cell storage (MLC)
Programming
Random access memory
Resistance
resistance switching random access memory (RRAM)
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Summary:Resistance switching random access memory (RRAM) is deemed as an emerging memory which has drawn considerable attention. This paper presents an approach for the synthesis of multilevel-cell (MLC) RRAM-based circuits using look-up-table (LUT) operations to complete a multiplication procedure. The recently proposed MLC function of RRAM revealed that RRAM could have a multilevel stable resistance by adjusting the voltage pulse, which is assigned to it. The simulation results show that the new LUT has a calculation speed that is increased by 35.7% and an area that is decreased by 14%, when compared with the traditional one for 16-bit multiplier.
ISSN:2472-9124
DOI:10.1109/VLSI-DAT.2018.8373268