An Improved Hot-Carrier Lifetime Evaluation Method for the n-Type LDMOS With Hot-Hole Injection

The hot-carrier lifetime evaluation method of a 90-V-level n-type lateral double-diffused MOS (LDMOS) is investigated in this brief. Our charge pumping experiments demonstrate that the on-resistance degradation of the device is induced by the combination effect of the hot-hole injection at field oxi...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2018-08, Vol.65 (8), p.3567-3571
Main Authors: Zhang, Chunwei, Li, Yang, Li, Zhiming, Fu, Xiaoqian, Chen, Zhenxiang
Format: Article
Language:English
Subjects:
Carrier lifetime
Degradation
Diffusion pumps
Experiments
Hot carriers
Hot-carrier reliability
hot-hole injection
Interface states
lateral double-diffused MOS (LDMOS)
Lifetime
lifetime evaluation
Logic gates
Predictive models
Reliability
Service life assessment
Silicon wafers
Stress
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The hot-carrier lifetime evaluation method of a 90-V-level n-type lateral double-diffused MOS (LDMOS) is investigated in this brief. Our charge pumping experiments demonstrate that the on-resistance degradation of the device is induced by the combination effect of the hot-hole injection at field oxide region and the interface state generation at field oxide and accumulation regions. Thereby, the hot-carrier lifetime of the device was evaluated by the comprehensive model proposed by Moens, which considers the effects of both hot-hole injection and the interface state generation. However, our experiments found that multiple lifetimes were obtained based on the model proposed by Moens and some lifetimes have the risk of overestimation. To solve the problem, an improved hot-carrier lifetime evaluation method based on a novel semiempirical model is proposed. Further experiments and analyses illustrate that the proposed hot-carrier lifetime evaluation method can provide a definite lifetime that has no risk of overestimation for the investigated LDMOS and has improved the lifetime prediction precision compare to the method based on Hu's model.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2018.2842117