Implications of Small Geometry Effects on gm/ID Based Design Methodology for Analog Circuits

Small geometry effects have become increasingly important in analog circuits as transistors continue to shrink. As a result, transconductance-to-drain current ( {g_{m}/I_{D}} ) transistor parameters are no longer width-independent. In this brief, a procedure to develop "unit-sized" transis...

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Bibliographic Details
Published in:IEEE transactions on circuits and systems. II, Express briefs Express briefs, 2019-01, Vol.66 (1), p.81-85
Main Authors: Ou, Jack, Ferreira, Pietro M.
Format: Article
Language:English
Subjects:
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Current density
Electronics
Engineering Sciences
Geometry
Logic gates
Micro and nanotechnologies
Microelectronics
Sensitivity
Stress
Threshold voltage
Transistors
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Summary:Small geometry effects have become increasingly important in analog circuits as transistors continue to shrink. As a result, transconductance-to-drain current ( {g_{m}/I_{D}} ) transistor parameters are no longer width-independent. In this brief, a procedure to develop "unit-sized" transistors with minimal sensitivity to small geometry effects is proposed. It is shown that by using the unit-sized transistors, the impact of small geometry effects on {g_{m}/I_{D}} dependent parameters such as current density and self gain can be reduced to 3.6% and 1.5%, respectively.
ISSN:1549-7747
1558-3791
DOI:10.1109/TCSII.2018.2846484