Hot-carrier induced off-state leakage current increase of LDMOS and approach to overcome the phenomenon

We found and reported the unique drastic Ioff increase of LDMOS caused by HC induced trapped charge in the STI under the off-state condition. In this paper, we propose two approaches to overcome this phenomenon, one is a cost-oriented structure which can realize high BVdss and the other is low Ron c...

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Bibliographic Details
Main Authors: Takahashi, Keita, Komatsu, Kanako, Sakamoto, Toshihiro, Kimura, Koji, Matsuoka, Fumitomo, Ishii, Yoshiaki, Egashira, Katsumi, Sakai, Masaki
Format: Conference Proceeding
Language:English
Subjects:
Electron traps
Hot carriers
Hot-carrier
Integrated circuits
Leakage currents
Logic gates
Off-state leakage current increase
Semiconductor process modeling
Stress
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Summary:We found and reported the unique drastic Ioff increase of LDMOS caused by HC induced trapped charge in the STI under the off-state condition. In this paper, we propose two approaches to overcome this phenomenon, one is a cost-oriented structure which can realize high BVdss and the other is low Ron characteristics suitable for high efficiency output circuit.
ISSN:1946-0201
DOI:10.1109/ISPSD.2018.8393663