High accuracy large-signal SPICE model for silicon carbide MOSFET

This paper provides a method to match characteristics of SiC MOSFET by a simple SPICE model. Besides, this method not only reaches highly approximate results in an accuracy of characteristics compared to commercial SiC SPICE model but also reduces lots of quantities of parameters from modified BSIM...

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Bibliographic Details
Main Authors: Hsu, Fu-Jen, Yen, Cheng-Tyng, Hung, Chien-Chung, Lee, Chwan-Ying, Lee, Lurng-Shehng, Chu, Kuo-Ting, Li, Ya-Fang
Format: Conference Proceeding
Language:English
Subjects:
body diode
empirical model
Logic gates
Mathematical model
MOSFET
Semiconductor device modeling
SiC MOSFET
Silicon carbide
SPICE
Voltage measurement
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Summary:This paper provides a method to match characteristics of SiC MOSFET by a simple SPICE model. Besides, this method not only reaches highly approximate results in an accuracy of characteristics compared to commercial SiC SPICE model but also reduces lots of quantities of parameters from modified BSIM model. This method expresses the 1 st quadrant I D -V DS and I D -V GS curve well by some additional modified equations. Also, the model development of the 3 rd quadrant characteristics, which combines a diode with a JFET model, obtains a good fitting result. Finally, compared to conventional models, the R-square value and normalized RMSD value are significantly improved.
ISSN:1946-0201
DOI:10.1109/ISPSD.2018.8393688