An advanced soft punch through buffer design for thin wafer IGBTs targeting lower losses and higher operating temperatures up to 200 °C

A shallow phosphorus buffer peak has been added to state-of-the-art planar soft punch through IGBT buffer (1200 V and 1700 V, 150 A, 13.6 × 13.6 mm 2 ) to lower the leakage current and expand the temperature operation range up to 200°C. The new buffer design is experimentally demonstrated to provide...

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Bibliographic Details
Main Authors: Buitrago, Elizabeth, Mesemanolis, Athanasios, Papadopoulos, Charalampos, Corvasce, Chiara, Vobecky, Jan, Rahimo, Munaf
Format: Conference Proceeding
Language:English
Subjects:
Anodes
Current measurement
Heating systems
Insulated gate bipolar transistors
Leakage currents
Phosphorus
Temperature measurement
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Summary:A shallow phosphorus buffer peak has been added to state-of-the-art planar soft punch through IGBT buffer (1200 V and 1700 V, 150 A, 13.6 × 13.6 mm 2 ) to lower the leakage current and expand the temperature operation range up to 200°C. The new buffer design is experimentally demonstrated to provide rugged switching (RBSOA) up to 200°C without compromising other high performance characteristics like soft switching and short circuit capability.
ISSN:1946-0201
DOI:10.1109/ISPSD.2018.8393712