2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials

This paper reports vertical Gallium nitride (GaN) PN diodes on free-standing GaN wafer using a complementary metal-oxide-semiconductor compatible contact materials. Static and switching current-voltage measurements have been carried out to evaluate the fabricated vertical GaN PN diodes. The vertical...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2018-01, Vol.6 (1), p.825-829
Main Authors: Liu, Xinke, Chiu, Hsien-Chin, Wang, Hou-Yu, Hu, Cong, Wang, Hsiang-Chun, Kao, Hsuan-Ling, Chien, Feng-Tso
Format: Article
Language:English
Subjects:
CMOS
Current measurement
Diodes
Electrical measurement
Free standing gallium nitride (GaN)
Gallium nitride
Gallium nitrides
high breakdown voltage
Metal oxides
power p-n diode
Recovery time
Resistance
Schottky diodes
Silicon
Temperature measurement
Voltage measurement
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Summary:This paper reports vertical Gallium nitride (GaN) PN diodes on free-standing GaN wafer using a complementary metal-oxide-semiconductor compatible contact materials. Static and switching current-voltage measurements have been carried out to evaluate the fabricated vertical GaN PN diodes. The vertical GaN PN diode in this paper shows turn-on voltage Von of ~3.3-3.4 V, on/off current ratio of ~2.7 × 10 7 , and ideal factor n of ~2.1. The reverse recovery time Trr is 21.2 ns and 23.2 ns, respectively, under a testing temperature of 300 K and 500 K. With an on-state resistance Ron of 3.9 mΩ·cm 2 and a breakdown voltage V BR of 2.4 kV, this device achieves a power device figure-of-merit V BR 2 /R on of 1.5×10 9 V 2 Ω -1 cm -2 .
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2018.2858294