First Demonstration of Silicon-Like >250 I/O Per mm Per Layer Multilayer RDL on Glass Panel Interposers by Embedded Photo-Trench and Fly Cut Planarization

This paper demonstrates for the first time >250 I/O per mm per layer on glass panels utilizing embedded photo-trench and fly cut planarization processes to meet the demands of next generation high bandwidth 2.5D Interposers. This paper combines the use of novel photo-imageable dielectrics develop...

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Bibliographic Details
Main Authors: DeProspo, Bartlet, Fuhan Liu, Nair, Chandrasekharan, Kubo, Atsushi, Wei, Frank, Ye Chen, Sundaram, Venkatesh, Tummala, Rao R.
Format: Conference Proceeding
Language:English
Subjects:
Copper
Embedded Trench Process
Fly-Cut Planarizaton
Glass
Glass Interposers
Planarization
Silicon
Substrates
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Summary:This paper demonstrates for the first time >250 I/O per mm per layer on glass panels utilizing embedded photo-trench and fly cut planarization processes to meet the demands of next generation high bandwidth 2.5D Interposers. This paper combines the use of novel photo-imageable dielectrics developed by TOK and advances in Disco's Fly-Cut planarization technique to deliver unit processes capable of delivering >250 I/O per mm per layer.
ISSN:2377-5726
DOI:10.1109/ECTC.2018.00177