Electrolytic Cobalt Fill of Sub-5 nm Node Interconnect Features

Electrolytic cobalt fill of sub-5 nm node features and a proposed model for the fill mechanism supported by cyclic voltammetry is presented. The transformation of the organic plating additive from an active to a de-activated state at the bottom of the feature is suggested as the mechanism of cobalt...

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Bibliographic Details
Main Authors: Wafula, F., Wu, J, Branagan, S, Suzuki, H, Gracias, A, van Eisden, J
Format: Conference Proceeding
Language:English
Subjects:
5 nm node
Additives
Cobalt
contact level
Filling
Hysteresis
interconnects
MEOL
metallization
Plating
Substrates
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Summary:Electrolytic cobalt fill of sub-5 nm node features and a proposed model for the fill mechanism supported by cyclic voltammetry is presented. The transformation of the organic plating additive from an active to a de-activated state at the bottom of the feature is suggested as the mechanism of cobalt bottom-up fill. Plating results in features with 2- and - 4 nm pre-plate openings show void-free fill.
ISSN:2380-6338
DOI:10.1109/IITC.2018.8430384