Replacement Metal Contact Using Sacrificial ILD0 for Wrap Around Contact in Scaled FinFET Technology

In this work, we propose replacement metal contact (RMC) flow by using sacrificial ILD0 that is suitable for wrap around contact (WAC). RMC minimize erosion of gate plug, spacer and S/D area at scaled contact formation. The concept of the flow has been demonstrated in short loop flow with ~50% conta...

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Bibliographic Details
Main Authors: Chew, S-A., Demuynck, S., Zhang, L., Pacco, A., Devriendt, K., Teugels, L., Hopf, T., Versluijs, J., Vrancken, C., Dangol, A., Altamirano Sanchez, E., Mocuta, D., Horiguchi, N.
Format: Conference Proceeding
Language:English
Subjects:
Bonding
Conductivity
FinFET
Heat treatment
Manganese
Reliability
Sacrificial ILD0
Scanning electron microscopy
Selective Etch
Surface treatment
Tone Reverse Contact Litho
Wrap Around Contact
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Summary:In this work, we propose replacement metal contact (RMC) flow by using sacrificial ILD0 that is suitable for wrap around contact (WAC). RMC minimize erosion of gate plug, spacer and S/D area at scaled contact formation. The concept of the flow has been demonstrated in short loop flow with ~50% contact resistance improvement for both NMOS, Si:P and PMOS, SiGe:B.
ISSN:2380-6338
DOI:10.1109/IITC.2018.8430457