RuO2/GaN Schottky contact formation with superior forward and reverse characteristics

This is a first time report of a ruthenium oxide (RuO/sub 2/) Schottky contact on GaN. RuO/sub 2/ and Pt Schottky diodes were fabricated and their characteristics compared. When the RuO/sub 2/ Schottky contact was annealed at 500/spl deg/C for 30 min, the current-voltage (I-V) and capacitance-voltag...

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Bibliographic Details
Published in:IEEE electron device letters 2000-06, Vol.21 (6), p.261-263
Main Authors: Lee, Suk-Hun, Chun, Jae-Kyu, Hur, Jae-Jin, Lee, Jae-Seung, Rue, Gi-Hong, Bae, Young-Ho, Hahm, Sung-Ho, Lee, Yong-Hyun, Lee, Jung-Hee
Format: Article
Language:English
Subjects:
Annealing
Fabrication
Ferroelectric materials
FETs
Gallium nitride
Schottky barriers
Schottky diodes
Temperature
Thermal conductivity
Thermal stability
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Summary:This is a first time report of a ruthenium oxide (RuO/sub 2/) Schottky contact on GaN. RuO/sub 2/ and Pt Schottky diodes were fabricated and their characteristics compared. When the RuO/sub 2/ Schottky contact was annealed at 500/spl deg/C for 30 min, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the RuO/sub 2/ were dramatically improved. The annealed RuO/sub 2//GaN Schottky contact exhibited a reverse leakage current that was at least two or three orders lower in magnitude than that of the Pt/GaN contact along with a very large barrier height of 1.46 eV, which is the highest value ever reported for a GaN Schottky system.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.843144