Thermophotovoltaic Generation of Electricity With InAs0.91Sb0.09 Device

We report the efficient low-temperature thermophotovoltaic energy conversion with an experimentally available InAs 0.91 Sb 0.09 device. It is shown that this device has a spectrum-insensitive optimum doping profile, N_{\textsf {d}{(}\textsf {a}{)}} = \textsf {10}^{\textsf {18(17)}}~\text{cm}^{-3}...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2018-10, Vol.65 (10), p.4429-4433
Main Authors: Zhang, Xiao-Long, Huang, A-Bao, Tian, Cheng-Yi, Wang, Yu, Lou, Yi-Yi
Format: Article
Language:English
Subjects:
Absorption
Doping
Efficiency
Energy conversion
InAsSb
Metals
Performance evaluation
Photonics
Resistance
Schottky diodes
thermophotovoltaic (TPV)
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Summary:We report the efficient low-temperature thermophotovoltaic energy conversion with an experimentally available InAs 0.91 Sb 0.09 device. It is shown that this device has a spectrum-insensitive optimum doping profile, N_{\textsf {d}{(}\textsf {a}{)}} = \textsf {10}^{\textsf {18(17)}}~\text{cm}^{-3} . With this optimum doping profile, it is further shown that for spectrum temperature lower than 1400 K, InAs 0.91 Sb 0.09 device shows thermal conversion efficiency superior to any reported GaInAsSb devices under the same spectrum illumination. For spectrum temperature ranging from 800 to 1400 K, device efficiency in the range of 8%-16% is promised for InAs 0.91 Sb 0.09 device.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2018.2862386