Thermal conductivity of Si/Ge superlattices

We report in this paper the thermal conductivity measurement of Si/Ge superlattices as a function of the temperature and the period thickness. The symmetrized Si/Ge superlattices are grown by MBE on Si substrates with a graded buffer layer. A comparative 3/spl omega/ method is used to measure the th...

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Bibliographic Details
Main Authors: Borca-Tasciuc, T., Weili Liu, Jianlin Liu, Taofang Zeng, Song, D.W., Moore, C.D., Gang Chen, Wang, K.L., Goorsky, M.S., Radetic, T., Gronsky, R., Xiangzhong Sun, Dresselhaus, M.S.
Format: Conference Proceeding
Language:English
Subjects:
Conducting materials
Conductivity measurement
Gallium arsenide
Materials science and technology
Molecular beam epitaxial growth
Superlattices
Temperature
Thermal conductivity
Thermal engineering
Thermoelectricity
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Summary:We report in this paper the thermal conductivity measurement of Si/Ge superlattices as a function of the temperature and the period thickness. The symmetrized Si/Ge superlattices are grown by MBE on Si substrates with a graded buffer layer. A comparative 3/spl omega/ method is used to measure the thermal conductivity of the buffer and the superlattices between 80K-300K. The thermal conductivity is carried out in conjunction with X-ray and TEM sample characterization. The measured thermal conductivity values are lower than that of their corresponding alloys and show a decreasing trend with increasing period thickness which are corroborated with the TEM characterization of the dislocation density.
ISSN:1094-2734
DOI:10.1109/ICT.1999.843368