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Thermal conductivity of Si/Ge superlattices
We report in this paper the thermal conductivity measurement of Si/Ge superlattices as a function of the temperature and the period thickness. The symmetrized Si/Ge superlattices are grown by MBE on Si substrates with a graded buffer layer. A comparative 3/spl omega/ method is used to measure the th...
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| creator | Borca-Tasciuc, T. Weili Liu Jianlin Liu Taofang Zeng Song, D.W. Moore, C.D. Gang Chen Wang, K.L. Goorsky, M.S. Radetic, T. Gronsky, R. Xiangzhong Sun Dresselhaus, M.S. |
| description | We report in this paper the thermal conductivity measurement of Si/Ge superlattices as a function of the temperature and the period thickness. The symmetrized Si/Ge superlattices are grown by MBE on Si substrates with a graded buffer layer. A comparative 3/spl omega/ method is used to measure the thermal conductivity of the buffer and the superlattices between 80K-300K. The thermal conductivity is carried out in conjunction with X-ray and TEM sample characterization. The measured thermal conductivity values are lower than that of their corresponding alloys and show a decreasing trend with increasing period thickness which are corroborated with the TEM characterization of the dislocation density. |
| doi_str_mv | 10.1109/ICT.1999.843368 |
| format | conference_proceeding |
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The symmetrized Si/Ge superlattices are grown by MBE on Si substrates with a graded buffer layer. A comparative 3/spl omega/ method is used to measure the thermal conductivity of the buffer and the superlattices between 80K-300K. The thermal conductivity is carried out in conjunction with X-ray and TEM sample characterization. The measured thermal conductivity values are lower than that of their corresponding alloys and show a decreasing trend with increasing period thickness which are corroborated with the TEM characterization of the dislocation density.</description><identifier>ISSN: 1094-2734</identifier><identifier>ISBN: 9780780354517</identifier><identifier>ISBN: 0780354516</identifier><identifier>DOI: 10.1109/ICT.1999.843368</identifier><language>eng</language><publisher>IEEE</publisher><subject>Conducting materials ; Conductivity measurement ; Gallium arsenide ; Materials science and technology ; Molecular beam epitaxial growth ; Superlattices ; Temperature ; Thermal conductivity ; Thermal engineering ; Thermoelectricity</subject><ispartof>Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. 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The measured thermal conductivity values are lower than that of their corresponding alloys and show a decreasing trend with increasing period thickness which are corroborated with the TEM characterization of the dislocation density.</description><subject>Conducting materials</subject><subject>Conductivity measurement</subject><subject>Gallium arsenide</subject><subject>Materials science and technology</subject><subject>Molecular beam epitaxial growth</subject><subject>Superlattices</subject><subject>Temperature</subject><subject>Thermal conductivity</subject><subject>Thermal engineering</subject><subject>Thermoelectricity</subject><issn>1094-2734</issn><isbn>9780780354517</isbn><isbn>0780354516</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1999</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotT01Lw0AUXNCCpeZc8JS7JN23bz-PErQWCh7MvWw2L7iS2pJNhf57F-owMJeZYYaxNfAagLvNrmlrcM7VViJqe8cKZyzPRCUVmHu2zC5ZCYPygRUpffMMqZQUesme2y-ajn4sw-mnv4Q5_sb5Wp6G8jNutlSmy5mm0c9zDJQe2WLwY6LiX1esfXttm_dq_7HdNS_7KlozVwN6JYCMNhw6MEqS6VwnoOsRFAQtJKpgiEvsrcgLuSennNRhMJgThCv2dKuNRHQ4T_Hop-vhdg7_AJEBQJw</recordid><startdate>1999</startdate><enddate>1999</enddate><creator>Borca-Tasciuc, T.</creator><creator>Weili Liu</creator><creator>Jianlin Liu</creator><creator>Taofang Zeng</creator><creator>Song, D.W.</creator><creator>Moore, C.D.</creator><creator>Gang Chen</creator><creator>Wang, K.L.</creator><creator>Goorsky, M.S.</creator><creator>Radetic, T.</creator><creator>Gronsky, R.</creator><creator>Xiangzhong Sun</creator><creator>Dresselhaus, M.S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1999</creationdate><title>Thermal conductivity of Si/Ge superlattices</title><author>Borca-Tasciuc, T. ; Weili Liu ; Jianlin Liu ; Taofang Zeng ; Song, D.W. ; Moore, C.D. ; Gang Chen ; Wang, K.L. ; Goorsky, M.S. ; Radetic, T. ; Gronsky, R. ; Xiangzhong Sun ; Dresselhaus, M.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i87t-f3a521e76701b1754e7b9b21bd3151c62435c7e043d825450ae95946cf7301be3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Conducting materials</topic><topic>Conductivity measurement</topic><topic>Gallium arsenide</topic><topic>Materials science and technology</topic><topic>Molecular beam epitaxial growth</topic><topic>Superlattices</topic><topic>Temperature</topic><topic>Thermal conductivity</topic><topic>Thermal engineering</topic><topic>Thermoelectricity</topic><toplevel>online_resources</toplevel><creatorcontrib>Borca-Tasciuc, T.</creatorcontrib><creatorcontrib>Weili Liu</creatorcontrib><creatorcontrib>Jianlin Liu</creatorcontrib><creatorcontrib>Taofang Zeng</creatorcontrib><creatorcontrib>Song, D.W.</creatorcontrib><creatorcontrib>Moore, C.D.</creatorcontrib><creatorcontrib>Gang Chen</creatorcontrib><creatorcontrib>Wang, K.L.</creatorcontrib><creatorcontrib>Goorsky, M.S.</creatorcontrib><creatorcontrib>Radetic, T.</creatorcontrib><creatorcontrib>Gronsky, R.</creatorcontrib><creatorcontrib>Xiangzhong Sun</creatorcontrib><creatorcontrib>Dresselhaus, M.S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Borca-Tasciuc, T.</au><au>Weili Liu</au><au>Jianlin Liu</au><au>Taofang Zeng</au><au>Song, D.W.</au><au>Moore, C.D.</au><au>Gang Chen</au><au>Wang, K.L.</au><au>Goorsky, M.S.</au><au>Radetic, T.</au><au>Gronsky, R.</au><au>Xiangzhong Sun</au><au>Dresselhaus, M.S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Thermal conductivity of Si/Ge superlattices</atitle><btitle>Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)</btitle><stitle>ICT</stitle><date>1999</date><risdate>1999</risdate><spage>201</spage><epage>204</epage><pages>201-204</pages><issn>1094-2734</issn><isbn>9780780354517</isbn><isbn>0780354516</isbn><abstract>We report in this paper the thermal conductivity measurement of Si/Ge superlattices as a function of the temperature and the period thickness. The symmetrized Si/Ge superlattices are grown by MBE on Si substrates with a graded buffer layer. A comparative 3/spl omega/ method is used to measure the thermal conductivity of the buffer and the superlattices between 80K-300K. The thermal conductivity is carried out in conjunction with X-ray and TEM sample characterization. The measured thermal conductivity values are lower than that of their corresponding alloys and show a decreasing trend with increasing period thickness which are corroborated with the TEM characterization of the dislocation density.</abstract><pub>IEEE</pub><doi>10.1109/ICT.1999.843368</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 1094-2734 |
| ispartof | Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407), 1999, p.201-204 |
| issn | 1094-2734 |
| language | eng |
| recordid | cdi_ieee_primary_843368 |
| source | IEEE Xplore All Conference Series |
| subjects | Conducting materials Conductivity measurement Gallium arsenide Materials science and technology Molecular beam epitaxial growth Superlattices Temperature Thermal conductivity Thermal engineering Thermoelectricity |
| title | Thermal conductivity of Si/Ge superlattices |
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