Improvements in GeTe-based Phase Change RF Switches

Recent progress in GeTe-based phase-change RF switch technology will be presented. Use of tungsten micro-heat-ers in the inline phase change switch (IPCS) processes has improved device performance and reliability. Finite element simulations of the melt/quench process in GeTe for a thermally activate...

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Bibliographic Details
Main Authors: Young, Robert M., Borodulin, Pavel, El-Hinnawy, Nabil, Ezis, Andy, King, Matthew R., Luu, Vivien, Nichols, Doyle T.
Format: Conference Proceeding
Language:English
Subjects:
attenuator
Attenuators
Electromagnetic heating
germanium telluride (GeTe)
Gold
Inline Phase-Change Switch (IPCS)
Loss measurement
Low Loss RF switch
Radio frequency
RF attenuator
single-pole double-throw (SPDT) switch
thermal simulation
Tungsten
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Summary:Recent progress in GeTe-based phase-change RF switch technology will be presented. Use of tungsten micro-heat-ers in the inline phase change switch (IPCS) processes has improved device performance and reliability. Finite element simulations of the melt/quench process in GeTe for a thermally activated independent tungsten thin film heating element will be shown. A small (0.33mm × 0.61mm) series-shunt single-pole double-throw (SPDT) switch based on 3rd generation IPCS technology was built and characterized. The SPDT switch exhibited less than 1 dB insertion loss in the DC-65GHz bandwidth. We also report measured data of a wide-band, DC-65GHz, monolithic 4-bit attenuator circuit using IPCS technology.
ISSN:2576-7216
DOI:10.1109/MWSYM.2018.8439212