On-wafer Measurements of Responsivity of FET-based subTHz Detectors

This article describes a novel approach to measure responsivity of a FET-based sub-THz detector using on-wafer probes to directly feed a bare antenna-less detecting device. Thus, the approach eliminates the need to know beforehand the detector's effective aperture, which can be a source of larg...

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Bibliographic Details
Main Authors: Kopyt, P., Salski, B., Zagrajek, P., Bauwens, M., Obrebski, D., Marczewski, J., Barker, N. S.
Format: Conference Proceeding
Language:English
Subjects:
Antenna measurements
CMOSFETs
Detectors
HEMTs
MODFETs
MOSFET
Nondestructive testing
Probes
Sensitivity
Submillimeter wave detectors and measurements
Transmission line measurements
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Summary:This article describes a novel approach to measure responsivity of a FET-based sub-THz detector using on-wafer probes to directly feed a bare antenna-less detecting device. Thus, the approach eliminates the need to know beforehand the detector's effective aperture, which can be a source of large variation between responsivity measurements of various FET-based detectors often cited in the literature. It seems that the presented method can be useful at making direct comparisons between responsivity of various devices (e.g. MOSFETs, HEMTs etc.). As a demonstration, the sub-THz responsivity of FET devices fabricated using three different processes has been measured in the WR-3 band and compared.
ISSN:2576-7216
DOI:10.1109/MWSYM.2018.8439544