UHF Class-E Power Amplifier Design for Wide Range Variable Resistance Operation

This paper presents a simple switch model for a GaN HEMT device, extracted to estimate the output power and efficiency load-pull contours when the transistor is used in a UHF class-E power amplifier (PA). The impact of model parameters on the theoretical achievable efficiency versus output power bac...

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Bibliographic Details
Main Authors: Vegas, David, Pampin, Maria, Perez-Cisneros, Jose-Ramon, Ruiz, M. Nieves, Mediavilla, Angel, Garcia, Jose A.
Format: Conference Proceeding
Language:English
Subjects:
Chireix
Class-E
efficiency
Gallium nitride
HEMTs
Load modeling
load modulation
load-pull
outphasing
power amplifier
Power amplifiers
power converter
Power generation
Resistance
Switches
UHF
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Summary:This paper presents a simple switch model for a GaN HEMT device, extracted to estimate the output power and efficiency load-pull contours when the transistor is used in a UHF class-E power amplifier (PA). The impact of model parameters on the theoretical achievable efficiency versus output power backoff (PBO) profile is considered, to then be used in a load-insensitive class-E design methodology. A simple lumped element terminating network, derived from [1], was selected to approximate the desired zero voltage switching (ZVS) operation along a wide range of resistive loads. A 700 MHz outphasing transmitter, amenable to be transformed into a resonant dc/dc power converter., has been implemented for validation. Drain efficiency peaks of 82.2% and 78% have been measured for each application case, with values above 70% and 60% at 10 dB of backoff and 30% of nominal dc output power, respectively.
ISSN:2576-7216
DOI:10.1109/MWSYM.2018.8439591