An S-band Internally Matched Packaged GaN HEMT with over 720W Peak Power and 58% PAE

In this paper, the design and the characteristics of an S-band High Power internally matched packaged field effect transistor (IMFET) with GaN HEMT are reported. To reduce the size of the IMFET, single layer capacitors (SLC) with high dielectric constant were used. Also, the impedance matching circu...

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Bibliographic Details
Main Authors: Oh, Kwanjin, Lee, Sangmin, Kim, Heejun, Yoon, Heejae
Format: Conference Proceeding
Language:English
Subjects:
Gallium nitride
GaN HEMT
HEMTs
High Power
Internally Matched FET(IMFET)
Microwave amplifiers
Microwave circuits
Pins
Power Amplifier(PA)
Power amplifiers
Power generation
S-band
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Summary:In this paper, the design and the characteristics of an S-band High Power internally matched packaged field effect transistor (IMFET) with GaN HEMT are reported. To reduce the size of the IMFET, single layer capacitors (SLC) with high dielectric constant were used. Also, the impedance matching circuits were fabricated on aluminum nitride substrates. The output power, power gain and PAE of the amplifier were measured as 58.57dBm (720W), 10.6dB, and 58%, respectively at 3.4GHz. Due to the compact size of the package, 24mm × 17.4mm, these results show the record high output power per unit area of the package at this frequency.
ISSN:2576-7216
DOI:10.1109/MWSYM.2018.8439618