An S-band Internally Matched Packaged GaN HEMT with over 720W Peak Power and 58% PAE

In this paper, the design and the characteristics of an S-band High Power internally matched packaged field effect transistor (IMFET) with GaN HEMT are reported. To reduce the size of the IMFET, single layer capacitors (SLC) with high dielectric constant were used. Also, the impedance matching circu...

Full description

Saved in:
Bibliographic Details
Main Authors: Oh, Kwanjin, Lee, Sangmin, Kim, Heejun, Yoon, Heejae
Format: Conference Proceeding
Language:English
Subjects:
Gallium nitride
GaN HEMT
HEMTs
High Power
Internally Matched FET(IMFET)
Microwave amplifiers
Microwave circuits
Pins
Power Amplifier(PA)
Power amplifiers
Power generation
S-band
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 646
container_issue
container_start_page 643
container_title
container_volume
creator Oh, Kwanjin
Lee, Sangmin
Kim, Heejun
Yoon, Heejae
description In this paper, the design and the characteristics of an S-band High Power internally matched packaged field effect transistor (IMFET) with GaN HEMT are reported. To reduce the size of the IMFET, single layer capacitors (SLC) with high dielectric constant were used. Also, the impedance matching circuits were fabricated on aluminum nitride substrates. The output power, power gain and PAE of the amplifier were measured as 58.57dBm (720W), 10.6dB, and 58%, respectively at 3.4GHz. Due to the compact size of the package, 24mm × 17.4mm, these results show the record high output power per unit area of the package at this frequency.
doi_str_mv 10.1109/MWSYM.2018.8439618
format conference_proceeding
fullrecord <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_8439618</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8439618</ieee_id><sourcerecordid>8439618</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-cbad51ef24b1314da18dd0b4055961d85f83bf86495670f93c25fd17a5e7df5d3</originalsourceid><addsrcrecordid>eNotkEFPwjAYhquJiYj8Ab304nGzX7uv7Y4LmUDCdAkzxBPp1lYmc5ixQPj3zsjpfd7Lk7wvIQ_AQgAWP2fr1UcWcgY61JGIJegrcgcotEQmlbgmI45KBoqDvCWTw-GLMcaljpSQI1IkLV0FpWktXbS961rTNGeamb7aOktzU-3M5wAz80rnaVbQU91v6f7oOqo4W9PcmR3N96eh_ylQP9E8Se_JjTfNwU0uOSbvL2kxnQfLt9limiyDGhT2QVUai-A8j0oQEFkD2lpWRgxxWGE1ei1Kr2UUo1TMx6Li6C0og05Zj1aMyeO_t3bObX66-tt0583lBPEL1HRNaA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>An S-band Internally Matched Packaged GaN HEMT with over 720W Peak Power and 58% PAE</title><source>IEEE Xplore All Conference Series</source><creator>Oh, Kwanjin ; Lee, Sangmin ; Kim, Heejun ; Yoon, Heejae</creator><creatorcontrib>Oh, Kwanjin ; Lee, Sangmin ; Kim, Heejun ; Yoon, Heejae</creatorcontrib><description>In this paper, the design and the characteristics of an S-band High Power internally matched packaged field effect transistor (IMFET) with GaN HEMT are reported. To reduce the size of the IMFET, single layer capacitors (SLC) with high dielectric constant were used. Also, the impedance matching circuits were fabricated on aluminum nitride substrates. The output power, power gain and PAE of the amplifier were measured as 58.57dBm (720W), 10.6dB, and 58%, respectively at 3.4GHz. Due to the compact size of the package, 24mm × 17.4mm, these results show the record high output power per unit area of the package at this frequency.</description><identifier>EISSN: 2576-7216</identifier><identifier>EISBN: 1538650673</identifier><identifier>EISBN: 9781538650677</identifier><identifier>DOI: 10.1109/MWSYM.2018.8439618</identifier><language>eng</language><publisher>IEEE</publisher><subject>Gallium nitride ; GaN HEMT ; HEMTs ; High Power ; Internally Matched FET(IMFET) ; Microwave amplifiers ; Microwave circuits ; Pins ; Power Amplifier(PA) ; Power amplifiers ; Power generation ; S-band</subject><ispartof>2018 IEEE/MTT-S International Microwave Symposium - IMS, 2018, p.643-646</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8439618$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,23928,23929,25138,27923,54553,54930</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8439618$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Oh, Kwanjin</creatorcontrib><creatorcontrib>Lee, Sangmin</creatorcontrib><creatorcontrib>Kim, Heejun</creatorcontrib><creatorcontrib>Yoon, Heejae</creatorcontrib><title>An S-band Internally Matched Packaged GaN HEMT with over 720W Peak Power and 58% PAE</title><title>2018 IEEE/MTT-S International Microwave Symposium - IMS</title><addtitle>MWSYM</addtitle><description>In this paper, the design and the characteristics of an S-band High Power internally matched packaged field effect transistor (IMFET) with GaN HEMT are reported. To reduce the size of the IMFET, single layer capacitors (SLC) with high dielectric constant were used. Also, the impedance matching circuits were fabricated on aluminum nitride substrates. The output power, power gain and PAE of the amplifier were measured as 58.57dBm (720W), 10.6dB, and 58%, respectively at 3.4GHz. Due to the compact size of the package, 24mm × 17.4mm, these results show the record high output power per unit area of the package at this frequency.</description><subject>Gallium nitride</subject><subject>GaN HEMT</subject><subject>HEMTs</subject><subject>High Power</subject><subject>Internally Matched FET(IMFET)</subject><subject>Microwave amplifiers</subject><subject>Microwave circuits</subject><subject>Pins</subject><subject>Power Amplifier(PA)</subject><subject>Power amplifiers</subject><subject>Power generation</subject><subject>S-band</subject><issn>2576-7216</issn><isbn>1538650673</isbn><isbn>9781538650677</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2018</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotkEFPwjAYhquJiYj8Ab304nGzX7uv7Y4LmUDCdAkzxBPp1lYmc5ixQPj3zsjpfd7Lk7wvIQ_AQgAWP2fr1UcWcgY61JGIJegrcgcotEQmlbgmI45KBoqDvCWTw-GLMcaljpSQI1IkLV0FpWktXbS961rTNGeamb7aOktzU-3M5wAz80rnaVbQU91v6f7oOqo4W9PcmR3N96eh_ylQP9E8Se_JjTfNwU0uOSbvL2kxnQfLt9limiyDGhT2QVUai-A8j0oQEFkD2lpWRgxxWGE1ei1Kr2UUo1TMx6Li6C0og05Zj1aMyeO_t3bObX66-tt0583lBPEL1HRNaA</recordid><startdate>201806</startdate><enddate>201806</enddate><creator>Oh, Kwanjin</creator><creator>Lee, Sangmin</creator><creator>Kim, Heejun</creator><creator>Yoon, Heejae</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201806</creationdate><title>An S-band Internally Matched Packaged GaN HEMT with over 720W Peak Power and 58% PAE</title><author>Oh, Kwanjin ; Lee, Sangmin ; Kim, Heejun ; Yoon, Heejae</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-cbad51ef24b1314da18dd0b4055961d85f83bf86495670f93c25fd17a5e7df5d3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Gallium nitride</topic><topic>GaN HEMT</topic><topic>HEMTs</topic><topic>High Power</topic><topic>Internally Matched FET(IMFET)</topic><topic>Microwave amplifiers</topic><topic>Microwave circuits</topic><topic>Pins</topic><topic>Power Amplifier(PA)</topic><topic>Power amplifiers</topic><topic>Power generation</topic><topic>S-band</topic><toplevel>online_resources</toplevel><creatorcontrib>Oh, Kwanjin</creatorcontrib><creatorcontrib>Lee, Sangmin</creatorcontrib><creatorcontrib>Kim, Heejun</creatorcontrib><creatorcontrib>Yoon, Heejae</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Oh, Kwanjin</au><au>Lee, Sangmin</au><au>Kim, Heejun</au><au>Yoon, Heejae</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>An S-band Internally Matched Packaged GaN HEMT with over 720W Peak Power and 58% PAE</atitle><btitle>2018 IEEE/MTT-S International Microwave Symposium - IMS</btitle><stitle>MWSYM</stitle><date>2018-06</date><risdate>2018</risdate><spage>643</spage><epage>646</epage><pages>643-646</pages><eissn>2576-7216</eissn><eisbn>1538650673</eisbn><eisbn>9781538650677</eisbn><abstract>In this paper, the design and the characteristics of an S-band High Power internally matched packaged field effect transistor (IMFET) with GaN HEMT are reported. To reduce the size of the IMFET, single layer capacitors (SLC) with high dielectric constant were used. Also, the impedance matching circuits were fabricated on aluminum nitride substrates. The output power, power gain and PAE of the amplifier were measured as 58.57dBm (720W), 10.6dB, and 58%, respectively at 3.4GHz. Due to the compact size of the package, 24mm × 17.4mm, these results show the record high output power per unit area of the package at this frequency.</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2018.8439618</doi><tpages>4</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier EISSN: 2576-7216
ispartof 2018 IEEE/MTT-S International Microwave Symposium - IMS, 2018, p.643-646
issn 2576-7216
language eng
recordid cdi_ieee_primary_8439618
source IEEE Xplore All Conference Series
subjects Gallium nitride
GaN HEMT
HEMTs
High Power
Internally Matched FET(IMFET)
Microwave amplifiers
Microwave circuits
Pins
Power Amplifier(PA)
Power amplifiers
Power generation
S-band
title An S-band Internally Matched Packaged GaN HEMT with over 720W Peak Power and 58% PAE
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T17%3A34%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=An%20S-band%20Internally%20Matched%20Packaged%20GaN%20HEMT%20with%20over%20720W%20Peak%20Power%20and%2058%25%20PAE&rft.btitle=2018%20IEEE/MTT-S%20International%20Microwave%20Symposium%20-%20IMS&rft.au=Oh,%20Kwanjin&rft.date=2018-06&rft.spage=643&rft.epage=646&rft.pages=643-646&rft.eissn=2576-7216&rft_id=info:doi/10.1109/MWSYM.2018.8439618&rft.eisbn=1538650673&rft.eisbn_list=9781538650677&rft_dat=%3Cieee_CHZPO%3E8439618%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i175t-cbad51ef24b1314da18dd0b4055961d85f83bf86495670f93c25fd17a5e7df5d3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=8439618&rfr_iscdi=true