Volterra series simulations of RF intermodulation characteristics of SiGe HBT's

A systematic analysis of two-tone intermodulation in UHV/CVD SiGe HBT's is performed using the Volterra series approach. The impact of source and load impedance, frequency, tone-spacing, and CB feedback are examined. The contribution of each individual nonlinearity is identified, and the intera...

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Bibliographic Details
Main Authors: Guofu Niu, Cressler, J.D., Webster, C.S., Joseph, A.J., Harame, D.L.
Format: Conference Proceeding
Language:English
Subjects:
Circuits
Computational modeling
Germanium silicon alloys
Heterojunction bipolar transistors
Linearity
Microelectronics
Nonlinear distortion
Radio frequency
Silicon germanium
Virtual colonoscopy
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Summary:A systematic analysis of two-tone intermodulation in UHV/CVD SiGe HBT's is performed using the Volterra series approach. The impact of source and load impedance, frequency, tone-spacing, and CB feedback are examined. The contribution of each individual nonlinearity is identified, and the interaction (cancellation or enhancement) among the nonlinearities is shown to be a function of bias current, load condition, tone-spacing and CB feedback capacitance.
DOI:10.1109/SMIC.2000.844318