Self-heating induced Variability and Reliability in Nanosheet-FETs Based SRAM

In this paper a new methodology is proposed to investigate variability and reliability correlated with self-heating effect (SHE) in digital circuits during random operation. In this methodology, the arbitrary power waveform (APW) self-heating model is applied to carry out self-heating evaluation wit...

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Bibliographic Details
Main Authors: Chen, Wangyong, Cai, Linlin, Wang, Kunliang, Zhang, Xing, Liu, Xiaoyan, Du, Gang
Format: Conference Proceeding
Language:English
Subjects:
Degradation
HCI degradation
Human computer interaction
Integrated circuit modeling
Integrated circuit reliability
Nanosheet-FETs
Random access memory
self-heating effect
SRAM
Stress
variability
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Summary:In this paper a new methodology is proposed to investigate variability and reliability correlated with self-heating effect (SHE) in digital circuits during random operation. In this methodology, the arbitrary power waveform (APW) self-heating model is applied to carry out self-heating evaluation with the input sequences generated by the power waveform generator (PWG). Based on the proposed method, self-heating induced variability and HCI degradation in Nanosheet-FETs based SRAM are investigated. The results show it is essential to take the self-heating variation into account for circuit design and reliability prediction.
ISSN:1946-1550
DOI:10.1109/IPFA.2018.8452601