Advances in SiCN-SiCN Bonding with High Accuracy Wafer-to-Wafer (W2W) Stacking Technology

• Main Authors: Peng, L., Kim, S-W, Iacovo, S., Inoue, F., Phommahaxay, A., Sleeckx, E., De Vos, J., Miller, A., Beyer, G., Beyne, E., Zinner, D., Wagenleitner, T., Uhrmann, T., Wimplinger, M., Schoenaers, B., Stesmans, A., Afanas'ev, V. V.
• Format: Conference Proceeding
• Language: English
• Subjects: Annealing; Bonding; Chemicals; Dielectrics; Silicon; Surface cleaning
• ISSN: 2380-6338
• DOI: 10.1109/IITC.2018.8457072

Results are presented of recent studies in material exploration for W2W bonding and advanced W2W alignment carried out as a holistic approach to enable a robust ultra-fine pitch interconnect for 3Dsystem-on-chip (SoC) technology. Various characterization methods have been employed, including electron-spin-resonance (ESR) monitoring of dangling-bond-type defects, invoked to compare SiCN-SiCN and SiO 2 -SiO 2 bonding bonding strength in terms of the the evolution of chemical bond densities at the interface. Furthermore, sub-200 nm W2W overlay performance has been demonstrated to cope with 3D interconnect scaling and stringent contact requirements. State-of-the-art overlay performance is achieved by the enabling features of the W2W aligner while the incoming wafer characteristics are monitored. The study provides a positive outlook to 3D SoC technological realization and sub-µm pitch scaling solutions.