High-Quality Solution-Processed Metal-Oxide Gate Dielectrics Realized With a Photo-Activated Metal-Oxide Nanocluster Precursor

High-quality solution-derived amorphous alumina ( {a} -Al 2 O 3 ) dielectric has been achieved with [Al _{\textsf {13}}{(}\mu _{\textsf {3}} -OH {)}_{\textsf {6}}{(}\mu -OH) 18 (H 2 O) 24 ](NO 3 ) 15 (Al-13 nanocluster) as a precursor and a local structure-controllable activation process via deep-UV...

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Bibliographic Details
Published in:IEEE electron device letters 2018-11, Vol.39 (11), p.1668-1671
Main Authors: Jo, Jeong-Wan, Kim, Kyung-Tae, Facchetti, Antonio, Kim, Myung-Gil, Park, Sung Kyu
Format: Article
Language:English
Subjects:
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Aluminum oxide
Annealing
Carbon nanotubes
Dielectric films
Dielectrics
Leakage current
Logic gates
Metal oxides
nanocluster
Nanoclusters
Nitrates
photochemical activation
Precursors
Semiconductor devices
solution process
Substrates
Thin film transistors
Thin films
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Summary:High-quality solution-derived amorphous alumina ( {a} -Al 2 O 3 ) dielectric has been achieved with [Al _{\textsf {13}}{(}\mu _{\textsf {3}} -OH {)}_{\textsf {6}}{(}\mu -OH) 18 (H 2 O) 24 ](NO 3 ) 15 (Al-13 nanocluster) as a precursor and a local structure-controllable activation process via deep-UV-induced photochemical activation. The synergetic combination of an Al-13 nanocluster precursor and high-energetic photochemical activation enables the formation of highly dense {a} -Al 2 O 3 thin films via an efficient dissociation and rearrangement of the nanocluster skeleton. The electrical characteristics of the nanocluster-based {a} -Al 2 O 3 thin films were investigated in terms of their operative electronic conduction mechanism by comparing conventional nitrate-based and vacuum-deposited films. From these results, it was found that the leakage current density of solution-processed {a} -Al 2 O 3 layers is largely affected by their precursor structures. Finally, to demonstrate the versatility of the high-quality nanocluster-based {a} -Al 2 O 3 dielectrics, carbon nanotube and metal-oxide thin-film transistors were fabricated on low thermal budget stretchable and rigid substrates, respectively.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2018.2870424