Sb-heterostructure interband backward diodes

Backward diodes are a version of Esaki tunnel diodes that are useful for mixing and detection. Ge backward diodes in particular have been used as temperature insensitive, zero bias square law detectors, capable of translating low level RF power into DC voltage or current with extreme linearity and l...

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Bibliographic Details
Published in:IEEE electron device letters 2000-07, Vol.21 (7), p.353-355
Main Authors: Schulman, J.N., Chow, D.H.
Format: Article
Language:English
Subjects:
Antimony
Current density
Detectors
Diodes
Figure of merit
Germanium
Linearity
Manufacturing
Molecular beam epitaxial growth
Molecular beam epitaxy
Noise level
Radio frequency
Temperature
Voltage
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Summary:Backward diodes are a version of Esaki tunnel diodes that are useful for mixing and detection. Ge backward diodes in particular have been used as temperature insensitive, zero bias square law detectors, capable of translating low level RF power into DC voltage or current with extreme linearity and low noise. However, Ge diodes are difficult to reproducibly manufacture and are physically fragile. Here we demonstrate specially designed Sb-heterostructure-based backward diodes grown by molecular beam epitaxy. These diodes have superior figures of merit compared to Ge diodes, especially the current density and junction resistance, and are reproducible and physically rugged. In addition, the flexibility of MBE growth allows easy tailoring of the layer structure to maximize the desired figure of merit for a given application.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.847378