ASM GaN: Industry Standard Model for GaN RF and Power Devices-Part 1: DC, CV, and RF Model

We present the latest developments in Advance SPICE Model for GaN (ASM GaN) HEMTs in this paper. The ASM GaN model has been recently selected as an industry-standard compact model for GaN radio frequency (RF) and power devices. The core surface-potential calculation and the modeling of real device e...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2019-01, Vol.66 (1), p.80-86
Main Authors: Khandelwal, Sourabh, Chauhan, Yogesh Singh, Fjeldly, Tor A., Ghosh, Sudip, Pampori, Ahtisham, Mahajan, Dhawal, Dangi, Raghvendra, Ahsan, Sheikh Aamir
Format: Article
Language:English
Subjects:
Advance SPICE Model for GaN (ASM GaN)
Aluminum gallium nitride
compact models
Dependence
Electronic devices
Feature extraction
Gallium nitride
GaN FET
GaN HEMT
HEMTs
High electron mobility transistors
Industry standards
Integrated circuit modeling
Logic gates
Modelling
MODFETs
Radio frequency
Resistance
Semiconductor devices
SPICE model
surface potential
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Summary:We present the latest developments in Advance SPICE Model for GaN (ASM GaN) HEMTs in this paper. The ASM GaN model has been recently selected as an industry-standard compact model for GaN radio frequency (RF) and power devices. The core surface-potential calculation and the modeling of real device effects in this model are presented. We discuss the details of the nonlinear access region model and enhancement in this model to include a physical dependence on barrier thickness. We also present the novel model feature of configurable field-plate modeling and discuss the extraction procedure for the same. New results with the ASM GaN model on high-frequency and enhancement-mode GaN power devices are also presented.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2018.2867874