A High Performance Ge PIN Photodiode Compatible with High Volume Silicon Photonics Production Processes

A High Performance Ge PIN Photodiode has been demonstrated, integrated into a high volume-capable foundry Silicon Photonics Production Process. It features 0.9 A/W responsivity, 67 GHz optical bandwidth, and dark current density of 90 mA/cm 2 @-1V.

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Bibliographic Details
Main Authors: Zhu, Difeng, Zheng, Jie, Qamar, Yasir, Martynov, Oleg, Rezaie, Farnood, Preisler, Edward
Format: Conference Proceeding
Language:English
Subjects:
Bandwidth
Dark current
Ge Photo Diode
High Volume Production
Optical waveguides
Photonics
Pins
Production
Responsivity
Silicon
Online Access:Request full text
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Description
Summary:A High Performance Ge PIN Photodiode has been demonstrated, integrated into a high volume-capable foundry Silicon Photonics Production Process. It features 0.9 A/W responsivity, 67 GHz optical bandwidth, and dark current density of 90 mA/cm 2 @-1V.
ISSN:1949-209X
DOI:10.1109/GROUP4.2018.8478742