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A High Performance Ge PIN Photodiode Compatible with High Volume Silicon Photonics Production Processes

A High Performance Ge PIN Photodiode has been demonstrated, integrated into a high volume-capable foundry Silicon Photonics Production Process. It features 0.9 A/W responsivity, 67 GHz optical bandwidth, and dark current density of 90 mA/cm 2 @-1V.

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Main Authors:	Zhu, Difeng, Zheng, Jie, Qamar, Yasir, Martynov, Oleg, Rezaie, Farnood, Preisler, Edward
Format:	Conference Proceeding
Language:	English
Subjects:	Bandwidth Dark current Ge Photo Diode High Volume Production Optical waveguides Photonics Pins Production Responsivity Silicon
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creator	Zhu, Difeng Zheng, Jie Qamar, Yasir Martynov, Oleg Rezaie, Farnood Preisler, Edward
description	A High Performance Ge PIN Photodiode has been demonstrated, integrated into a high volume-capable foundry Silicon Photonics Production Process. It features 0.9 A/W responsivity, 67 GHz optical bandwidth, and dark current density of 90 mA/cm 2 @-1V.
doi_str_mv	10.1109/GROUP4.2018.8478742
format	conference_proceeding
fullrecord	<record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_8478742</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8478742</ieee_id><sourcerecordid>8478742</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-bbf38b4fb127996194c6516a9f6980bed14e5522b23d51576657f7364ea4b70e3</originalsourceid><addsrcrecordid>eNotkNtKw0AYhFdBsNY-QW_2BVL3fLgsQdNCsUGreFeyyZ92JcmWbIr49lXSq4FhvmEYhOaULCgl9il7237kYsEINQsjtNGC3aAHKrlRkivKb9GEWmETRuzXPZrF-E0IocwoZsgEHZZ45Q9HnENfh74tuhJwBjhfv-L8GIZQ-VABTkN7KgbvGsA_fjiOyGdozi3gd9_4MnRjvPNlxHkfqnM5-H-zDyXECPER3dVFE2F21SnavTzv0lWy2WbrdLlJvCVD4lzNjRO1o0xbq_52l0pSVdhaWUMcVFSAlIw5xitJpVZK6lpzJaAQThPgUzQfaz0A7E-9b4v-d3-9hV8A1Q9XEg</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A High Performance Ge PIN Photodiode Compatible with High Volume Silicon Photonics Production Processes</title><source>IEEE Xplore All Conference Series</source><creator>Zhu, Difeng ; Zheng, Jie ; Qamar, Yasir ; Martynov, Oleg ; Rezaie, Farnood ; Preisler, Edward</creator><creatorcontrib>Zhu, Difeng ; Zheng, Jie ; Qamar, Yasir ; Martynov, Oleg ; Rezaie, Farnood ; Preisler, Edward</creatorcontrib><description>A High Performance Ge PIN Photodiode has been demonstrated, integrated into a high volume-capable foundry Silicon Photonics Production Process. It features 0.9 A/W responsivity, 67 GHz optical bandwidth, and dark current density of 90 mA/cm 2 @-1V.</description><identifier>EISSN: 1949-209X</identifier><identifier>EISBN: 1538653613</identifier><identifier>EISBN: 9781538653616</identifier><identifier>DOI: 10.1109/GROUP4.2018.8478742</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bandwidth ; Dark current ; Ge Photo Diode ; High Volume Production ; Optical waveguides ; Photonics ; Pins ; Production ; Responsivity ; Silicon</subject><ispartof>2018 IEEE 15th International Conference on Group IV Photonics (GFP), 2018, p.1-2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8478742$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,23929,23930,25139,27924,54554,54931</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8478742$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Zhu, Difeng</creatorcontrib><creatorcontrib>Zheng, Jie</creatorcontrib><creatorcontrib>Qamar, Yasir</creatorcontrib><creatorcontrib>Martynov, Oleg</creatorcontrib><creatorcontrib>Rezaie, Farnood</creatorcontrib><creatorcontrib>Preisler, Edward</creatorcontrib><title>A High Performance Ge PIN Photodiode Compatible with High Volume Silicon Photonics Production Processes</title><title>2018 IEEE 15th International Conference on Group IV Photonics (GFP)</title><addtitle>GROUP4</addtitle><description>A High Performance Ge PIN Photodiode has been demonstrated, integrated into a high volume-capable foundry Silicon Photonics Production Process. It features 0.9 A/W responsivity, 67 GHz optical bandwidth, and dark current density of 90 mA/cm 2 @-1V.</description><subject>Bandwidth</subject><subject>Dark current</subject><subject>Ge Photo Diode</subject><subject>High Volume Production</subject><subject>Optical waveguides</subject><subject>Photonics</subject><subject>Pins</subject><subject>Production</subject><subject>Responsivity</subject><subject>Silicon</subject><issn>1949-209X</issn><isbn>1538653613</isbn><isbn>9781538653616</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2018</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotkNtKw0AYhFdBsNY-QW_2BVL3fLgsQdNCsUGreFeyyZ92JcmWbIr49lXSq4FhvmEYhOaULCgl9il7237kYsEINQsjtNGC3aAHKrlRkivKb9GEWmETRuzXPZrF-E0IocwoZsgEHZZ45Q9HnENfh74tuhJwBjhfv-L8GIZQ-VABTkN7KgbvGsA_fjiOyGdozi3gd9_4MnRjvPNlxHkfqnM5-H-zDyXECPER3dVFE2F21SnavTzv0lWy2WbrdLlJvCVD4lzNjRO1o0xbq_52l0pSVdhaWUMcVFSAlIw5xitJpVZK6lpzJaAQThPgUzQfaz0A7E-9b4v-d3-9hV8A1Q9XEg</recordid><startdate>201808</startdate><enddate>201808</enddate><creator>Zhu, Difeng</creator><creator>Zheng, Jie</creator><creator>Qamar, Yasir</creator><creator>Martynov, Oleg</creator><creator>Rezaie, Farnood</creator><creator>Preisler, Edward</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201808</creationdate><title>A High Performance Ge PIN Photodiode Compatible with High Volume Silicon Photonics Production Processes</title><author>Zhu, Difeng ; Zheng, Jie ; Qamar, Yasir ; Martynov, Oleg ; Rezaie, Farnood ; Preisler, Edward</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-bbf38b4fb127996194c6516a9f6980bed14e5522b23d51576657f7364ea4b70e3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Bandwidth</topic><topic>Dark current</topic><topic>Ge Photo Diode</topic><topic>High Volume Production</topic><topic>Optical waveguides</topic><topic>Photonics</topic><topic>Pins</topic><topic>Production</topic><topic>Responsivity</topic><topic>Silicon</topic><toplevel>online_resources</toplevel><creatorcontrib>Zhu, Difeng</creatorcontrib><creatorcontrib>Zheng, Jie</creatorcontrib><creatorcontrib>Qamar, Yasir</creatorcontrib><creatorcontrib>Martynov, Oleg</creatorcontrib><creatorcontrib>Rezaie, Farnood</creatorcontrib><creatorcontrib>Preisler, Edward</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhu, Difeng</au><au>Zheng, Jie</au><au>Qamar, Yasir</au><au>Martynov, Oleg</au><au>Rezaie, Farnood</au><au>Preisler, Edward</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A High Performance Ge PIN Photodiode Compatible with High Volume Silicon Photonics Production Processes</atitle><btitle>2018 IEEE 15th International Conference on Group IV Photonics (GFP)</btitle><stitle>GROUP4</stitle><date>2018-08</date><risdate>2018</risdate><spage>1</spage><epage>2</epage><pages>1-2</pages><eissn>1949-209X</eissn><eisbn>1538653613</eisbn><eisbn>9781538653616</eisbn><abstract>A High Performance Ge PIN Photodiode has been demonstrated, integrated into a high volume-capable foundry Silicon Photonics Production Process. It features 0.9 A/W responsivity, 67 GHz optical bandwidth, and dark current density of 90 mA/cm 2 @-1V.</abstract><pub>IEEE</pub><doi>10.1109/GROUP4.2018.8478742</doi><tpages>2</tpages></addata></record>
fulltext	fulltext_linktorsrc
identifier	EISSN: 1949-209X
ispartof	2018 IEEE 15th International Conference on Group IV Photonics (GFP), 2018, p.1-2
issn	1949-209X
language	eng
recordid	cdi_ieee_primary_8478742
source	IEEE Xplore All Conference Series
subjects	Bandwidth Dark current Ge Photo Diode High Volume Production Optical waveguides Photonics Pins Production Responsivity Silicon
title	A High Performance Ge PIN Photodiode Compatible with High Volume Silicon Photonics Production Processes
url	http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T17%3A50%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20High%20Performance%20Ge%20PIN%20Photodiode%20Compatible%20with%20High%20Volume%20Silicon%20Photonics%20Production%20Processes&rft.btitle=2018%20IEEE%2015th%20International%20Conference%20on%20Group%20IV%20Photonics%20(GFP)&rft.au=Zhu,%20Difeng&rft.date=2018-08&rft.spage=1&rft.epage=2&rft.pages=1-2&rft.eissn=1949-209X&rft_id=info:doi/10.1109/GROUP4.2018.8478742&rft.eisbn=1538653613&rft.eisbn_list=9781538653616&rft_dat=%3Cieee_CHZPO%3E8478742%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i90t-bbf38b4fb127996194c6516a9f6980bed14e5522b23d51576657f7364ea4b70e3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=8478742&rfr_iscdi=true