Towards Automotive Grade Embedded RRAM

Most types of resistive RAM (RRAM) explored over the past 20 years have suffered from reliability problems. As a result, RRAM has received relatively little consideration for use in automotive applications. The present article describes an improved subquantum Conductive Bridging RAM (CBRAM®) cell wh...

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Bibliographic Details
Main Authors: Jameson, J.R., Dinh, J., Gonzales, N., Hollmer, S., Hsu, S., Kim, D., Koushan, F., Lewis, D., Runnion, E., Shields, J., Tysdal, A., Wang, D., Gopinath, V.
Format: Conference Proceeding
Language:English
Subjects:
Automotive electronics
CBRAM
Nonvolatile memory
Resistive RAM
Semiconductor device reliability
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Summary:Most types of resistive RAM (RRAM) explored over the past 20 years have suffered from reliability problems. As a result, RRAM has received relatively little consideration for use in automotive applications. The present article describes an improved subquantum Conductive Bridging RAM (CBRAM®) cell whose reliability appears robust enough for automotive applications. The main types and levels of errors observed in the new cell stack are discussed, and reliability models are developed to predict endurance and storage lifetimes. A storage lifetime of more than 20yr at 150°C following \pmb{10^{4}} direct write cycles is predicted to be achievable for a median part failure probability of 1ppm. In addition to being attractive for low-power and high-performance applications, the present article shows that RRAM also has the potential to become a low cost, 1-mask embedded NVM for high-reliability applications.
ISSN:2378-6558
DOI:10.1109/ESSDERC.2018.8486890