Evolution and Optimization of BEOL MOM Capacitors Across Advanced CMOS Nodes

Metal-oxide-metal (MOM) capacitors fabricated in CMOS back-end-of-line (BEOL) interconnect layers are widely used for advanced digital, RF and mm-wave applications. This paper describes the impact of CMOS scaling trends on key MOM figures of merit across advanced CMOS nodes. A methodology for maximi...

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Bibliographic Details
Main Authors: Shi, Jinglin, Sidelnicov, A., Chew, Kok Wai J., Chin, Mei See, Schippel, C., Santos, J.M.M. dos, Schlaphof, F., Meinshausen, L., Long, John R., Harame, D.L.
Format: Conference Proceeding
Language:English
Subjects:
BEOL
Capacitance
Capacitors
Fingers
metal-oxide-metal capacitor
Metals
Method of moments
mm-wave
Radio frequency
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Summary:Metal-oxide-metal (MOM) capacitors fabricated in CMOS back-end-of-line (BEOL) interconnect layers are widely used for advanced digital, RF and mm-wave applications. This paper describes the impact of CMOS scaling trends on key MOM figures of merit across advanced CMOS nodes. A methodology for maximizing the operating voltage by trading-off footprint for increased working voltage during MOM development is presented. In addition, the impact of BEOL scaling on MOM figures of merit is presented across GlobalFoundries ™ 0.13-μm to 14-nm nodes. It is shown that capacitance density stops increasing beyond 28nm. However, RF characterization data for MOM capacitors fabricated in 22FDX® (22-nm) technology showing a high-Q of 110 for a 63-fF capacitor at 30GHz and Q of 80 for a 28-fF capacitor at 77GHz are presented. Capacitor Q-factor is also shown to be weakly dependent on scaling at a constant capacitance for advanced nodes.
ISSN:2378-6558
DOI:10.1109/ESSDERC.2018.8486905