Enhance of impurity related terahertz emission in optically pumped GaAs/AlGaAs quantum well structures

The terahertz radiation associated with electron transitions between impurity levels in GaAs/AlGaAs quantum wells is investigated in conditions of optical interband excitation. It has been shown that the near-infrared interband stimulated emission arising in the structure under intense pumping contr...

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Bibliographic Details
Main Authors: Firsov, D.A., Makhov, I.S., Panevin, V. Yu, Vinnichenko, M. Ya, Vorobjev, L.E., Vasil'ev, A.P., Maleev, N.A.
Format: Conference Proceeding
Language:English
Subjects:
Electron optics
Impurities
Optical pumping
Optical resonators
Optical saturation
Stimulated emission
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Summary:The terahertz radiation associated with electron transitions between impurity levels in GaAs/AlGaAs quantum wells is investigated in conditions of optical interband excitation. It has been shown that the near-infrared interband stimulated emission arising in the structure under intense pumping contributes to an increase in the terahertz radiation intensity. This phenomenon is associated with an intense depopulation of the donor level with stimulated interband radiation.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz.2018.8509889