All-Semiconductor Coupled-Cavity VCSELs for Narrow Linewidth

We demonstrate an all-semiconductor coupled-cavity VCSEL designed to achieve narrow linewidth at 850 nm. A resonant AlGaAs cavity of thickness 1,937 nm (8 wavelengths) is situated below the 3-quantum-well active region and results in an effective coupled-cavity length of 36 wavelengths.

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Bibliographic Details
Main Authors: Serkland, Darwin K., Morin, Theodore J., Grine, Alejandro J., Peake, Gregory M., Kendall, Wesley Y., Wood, Michael G., Hains, Christopher P., So, Haley M., Soudachanh, Amy L., Geib, Kent M.
Format: Conference Proceeding
Language:English
Subjects:
Atomic Clocks
Cavity resonators
Coupled Cavities
Current measurement
Distributed Bragg reflectors
Frequency Noise
Linewidth
Mode Selection
Single-Frequency Laser
Spectroscopy
Temperature measurement
Threshold current
Tunable Laser
VCSEL
Vertical cavity surface emitting lasers
Wavelength measurement
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Description
Summary:We demonstrate an all-semiconductor coupled-cavity VCSEL designed to achieve narrow linewidth at 850 nm. A resonant AlGaAs cavity of thickness 1,937 nm (8 wavelengths) is situated below the 3-quantum-well active region and results in an effective coupled-cavity length of 36 wavelengths.
ISSN:1947-6981
DOI:10.1109/ISLC.2018.8516182