1.5 μm GaInAsP High Mesa Laser Diode on Directly Bonded InP/Si Substrate

We report the successful fabrication of 1.5 μm GaInAsP high mesa laser diode on the directly bonded InP/Si substrate using MOVPE. A successful lasing operation at room temperature is achieved. We have investigated the lasing characteristics on the silicon substrate from the I-L characteristics, the...

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Bibliographic Details
Main Authors: Periyanayagam, Gandhi Kallarasan, Uchida, Kazuki, Sugiyama, Hirokazu, Han, Xu, Hayasaka, Natsuki, Aikawa, Masaki, Yada, Hiromu, Shimomura, Kazuhiko
Format: Conference Proceeding
Language:English
Subjects:
Diode lasers
Epitaxial growth
Epitaxial layers
Silicon
Substrates
Temperature
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Summary:We report the successful fabrication of 1.5 μm GaInAsP high mesa laser diode on the directly bonded InP/Si substrate using MOVPE. A successful lasing operation at room temperature is achieved. We have investigated the lasing characteristics on the silicon substrate from the I-L characteristics, the temperature dependence of threshold current and gain coefficient from the Fabry-Perot oscillation.
ISSN:1947-6981
DOI:10.1109/ISLC.2018.8516214