High-Power Flip-Chip Bonded Modified Uni-Traveling Carrier Photodiodes with −2.6 dBm RF Output Power at 160 GHz

We report back-illuminated InGaAsP/InP charge-compensated modified uni-travelling carrier photodiodes with 0.2 A/W responsivity. RF output power performance of PDs ranging from 4 to 11-µm diameters is measured out to 165 GHz, achieving −2.6 dBm at 160 GHz (9-µm) and 3-dB bandwidth reaching 120 GHz (...

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Bibliographic Details
Main Authors: Morgan, Jesse S., Sun, Keye, Li, Qinglong, Estrella, Steven, Woodson, Maddy, Hay, Kenneth, Mashanovitch, Milan, Beling, Andreas
Format: Conference Proceeding
Language:English
Online Access:Request full text
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Summary:We report back-illuminated InGaAsP/InP charge-compensated modified uni-travelling carrier photodiodes with 0.2 A/W responsivity. RF output power performance of PDs ranging from 4 to 11-µm diameters is measured out to 165 GHz, achieving −2.6 dBm at 160 GHz (9-µm) and 3-dB bandwidth reaching 120 GHz (4-µm).
ISSN:2575-274X
DOI:10.1109/IPCon.2018.8527260