A new trench base-shielded bipolar transistor

In this paper, a new power bipolar transistor structure called the trench base-shielded bipolar transistor (TBSBT) Is proposed and experimentally demonstrated. This structure incorporates deep p/sup +/ poly-Si trenches into the base of a conventional bipolar transistor. With the base shielded effect...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2000-08, Vol.47 (8), p.1662-1666
Main Authors: Chen, Q., You, B., Huang, A.Q., Sin, J.K.O.
Format: Article
Language:English
Subjects:
Bipolar transistors
Breakdown
Electric potential
Gain
Power bipolar transistors
Semiconductor devices
Switching
Trenches
Voltage
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Summary:In this paper, a new power bipolar transistor structure called the trench base-shielded bipolar transistor (TBSBT) Is proposed and experimentally demonstrated. This structure incorporates deep p/sup +/ poly-Si trenches into the base of a conventional bipolar transistor. With the base shielded effectively by the p/sup +/ trenches, the base of the TBSBT can be made very narrow to achieve high current gain h/sub FE/ and high cut-off frequency f/sub T/ without compromising on the breakdown voltage. Experimental results show that the on-state anti switching characteristics of the TBSBT are significantly better than those of the existing power bipolar transistors.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.853045