Low-noise and low-power front-end in 130 nm CMOS for triple-GEM detectors supporting wide range of detector capacitances with gain and peaking time programmability

An analog front-end in 130 (nm) CMOS technology was developed for the readout of triple-GEM detectors in the CMS experiment at CERN. The front-end has programmable peaking time - 15, 25, 35 and 45 (ns) - and gain - 48, 16.4 and 8.6 (mV/fC) - and is able to support a detector capacitance ranging from...

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Main Authors: Dabrowski, M., Aspell, P., Bravo, C., Lentdecker, G. De, Robertis, G. De, Irshad, A., Licciulli, F., Loddo, F., Petrow, H., Rosa, J., Tuuva, T., Tavernier, F., Leroux, P.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Detectors
Front-end electronics
Gain
Linearity
low noise and low-power circuits
Mesons
readout of GEM detectors
Sensitivity
Transistors
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creator Dabrowski, M.
Aspell, P.
Bravo, C.
Lentdecker, G. De
Robertis, G. De
Irshad, A.
Licciulli, F.
Loddo, F.
Petrow, H.
Rosa, J.
Tuuva, T.
Tavernier, F.
Leroux, P.
description An analog front-end in 130 (nm) CMOS technology was developed for the readout of triple-GEM detectors in the CMS experiment at CERN. The front-end has programmable peaking time - 15, 25, 35 and 45 (ns) - and gain - 48, 16.4 and 8.6 (mV/fC) - and is able to support a detector capacitance ranging from 0 to 120 (pF). In the design, many optimization techniques have been used to minimize the power consumption for given noise and timing requirements. Consequently, a single front-end channel consumes 790 (μA), and achieves an equivalent noise chargeof 620 (e-) at 0 (pF) detector capacitance with a noise slope of 33 (e-/pF). In order to simplify the peaking time programmability, an OTA-C based shaperwas used in the analog chain. The entire design hasbeen made radiation hard against TID. A chip comprising 129 front-end channels was fabricated and tested.
doi_str_mv 10.1109/NSSMIC.2017.8532666
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source IEEE Xplore All Conference Series
subjects Capacitance
Detectors
Front-end electronics
Gain
Linearity
low noise and low-power circuits
Mesons
readout of GEM detectors
Sensitivity
Transistors
title Low-noise and low-power front-end in 130 nm CMOS for triple-GEM detectors supporting wide range of detector capacitances with gain and peaking time programmability
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