Physical and electrical characterization of silsesquioxane-based ultra-low k dielectric films

Physical and electrical characterization of a Dow Corning silsesquioxane-based ultra-low k dielectric is presented. The film properties, such as refractive index, SiH bond density, thermal stability and susceptibility to moisture absorption are investigated as a function of processing conditions. It...

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Main Authors: Donaton, R.A., Iacopi, F., Baklanov, R., Shamiryan, D., Coenegrachts, B., Struyf, H., Lepage, M., Meuris, M., van Hove, M., Gray, W.D., Meynen, H., de Roest, D., Vanhaelemeersch, S., Maex, K.
Format: Conference Proceeding
Language:English
Subjects:
Absorption
Bonding
Dielectrics
Moisture
Optical films
Plasma density
Plasma materials processing
Plasma properties
Refractive index
Thermal stability
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Summary:Physical and electrical characterization of a Dow Corning silsesquioxane-based ultra-low k dielectric is presented. The film properties, such as refractive index, SiH bond density, thermal stability and susceptibility to moisture absorption are investigated as a function of processing conditions. It is shown that exposure of the films to plasma environments results in a change of porosity. A low-K dielectric film with a pore size around 3.5 nm is successfully integrated in 0.2 /spl mu/m single damascene structures.
DOI:10.1109/IITC.2000.854292