A RF transceiver for WDCT in a 25 GHz Si bipolar technology

An RF Si bipolar transceiver IC for WDCT is presented. The complete transceiver operates from 3.1 V to 5.1 V and provides very high integration level. The receiver uses a single conversion architecture with an image-reject frontend and needs no external trimming.

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Bibliographic Details
Main Authors: Li Puma, G., Geppert, W., Hadjizada, K., Van Waasen, S., Mevissen, W., Von Schwartzenberg, W., Heinen, S.
Format: Conference Proceeding
Language:English
Subjects:
Costs
Frequency shift keying
Power amplifiers
Radio frequency
Radiofrequency integrated circuits
Regulators
Synthesizers
Time division multiple access
Transceivers
Voltage-controlled oscillators
Online Access:Request full text
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Description
Summary:An RF Si bipolar transceiver IC for WDCT is presented. The complete transceiver operates from 3.1 V to 5.1 V and provides very high integration level. The receiver uses a single conversion architecture with an image-reject frontend and needs no external trimming.
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2000.854461