SiC Device Junction Temperature Online Monitoring

This paper presents a SiC device junction temperature monitoring method. The device internal gate resistance has a consistent temperature dependence. With different junction temperature conditions, the equivalent gate loop impedance will be different and change the gate driver currents. Through prop...

Full description

Saved in:
Bibliographic Details
Main Authors: Wang, Ruxi, Sabate, Juan, Mainali, Krishna, Sadilek, Tomas, Losee, Peter, Singh, Yash
Format: Conference Proceeding
Language:English
Subjects:
Gate Driver
Logic gates
Resistance
Signal processing
Silicon carbide
Temperature dependence
Temperature measurement
Temperature Sensor
Temperature sensors
Citations: Items that cite this one
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper presents a SiC device junction temperature monitoring method. The device internal gate resistance has a consistent temperature dependence. With different junction temperature conditions, the equivalent gate loop impedance will be different and change the gate driver currents. Through proper signal processing, this gate loop current peak value can be captured and utilized as the junction temperature indicator. The concept and feasibility was verified through both simulation and experimental results.
ISSN:2329-3748
DOI:10.1109/ECCE.2018.8558298