Loading…

SiC Device Junction Temperature Online Monitoring

This paper presents a SiC device junction temperature monitoring method. The device internal gate resistance has a consistent temperature dependence. With different junction temperature conditions, the equivalent gate loop impedance will be different and change the gate driver currents. Through prop...

Full description

Saved in:
Bibliographic Details
Main Authors: Wang, Ruxi, Sabate, Juan, Mainali, Krishna, Sadilek, Tomas, Losee, Peter, Singh, Yash
Format: Conference Proceeding
Language:English
Subjects:
Citations: Items that cite this one
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c223t-7947224ea0b5c49e51e2cd077a05ce80f6de84b12aa9bb3a9773b638a9e8d4dc3
cites
container_end_page 392
container_issue
container_start_page 387
container_title
container_volume
creator Wang, Ruxi
Sabate, Juan
Mainali, Krishna
Sadilek, Tomas
Losee, Peter
Singh, Yash
description This paper presents a SiC device junction temperature monitoring method. The device internal gate resistance has a consistent temperature dependence. With different junction temperature conditions, the equivalent gate loop impedance will be different and change the gate driver currents. Through proper signal processing, this gate loop current peak value can be captured and utilized as the junction temperature indicator. The concept and feasibility was verified through both simulation and experimental results.
doi_str_mv 10.1109/ECCE.2018.8558298
format conference_proceeding
fullrecord <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_8558298</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8558298</ieee_id><sourcerecordid>8558298</sourcerecordid><originalsourceid>FETCH-LOGICAL-c223t-7947224ea0b5c49e51e2cd077a05ce80f6de84b12aa9bb3a9773b638a9e8d4dc3</originalsourceid><addsrcrecordid>eNotz01OwzAQQGGDhERVcgDEJhdI8IzteLxEJvypqAvKunKcKTJqnSpJkbg9C7p6u096QtyCrAGku2-9b2uUQDUZQ-joQhTOEmjrnFWA5lIsUKGrlNV0LYpp-pZSQkNIEhYCPpIvH_knRS7fTjnOacjlhg9HHsN8Grlc533KXL4POc3DmPLXjbjahf3ExblL8fnUbvxLtVo_v_qHVRUR1VxZpy2i5iA7E7VjA4yxl9YGaSKT3DU9k-4AQ3Bdp4KzVnWNouCYet1HtRR3_25i5u1xTIcw_m7Pk-oPYZlEvA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>SiC Device Junction Temperature Online Monitoring</title><source>IEEE Xplore All Conference Series</source><creator>Wang, Ruxi ; Sabate, Juan ; Mainali, Krishna ; Sadilek, Tomas ; Losee, Peter ; Singh, Yash</creator><creatorcontrib>Wang, Ruxi ; Sabate, Juan ; Mainali, Krishna ; Sadilek, Tomas ; Losee, Peter ; Singh, Yash</creatorcontrib><description>This paper presents a SiC device junction temperature monitoring method. The device internal gate resistance has a consistent temperature dependence. With different junction temperature conditions, the equivalent gate loop impedance will be different and change the gate driver currents. Through proper signal processing, this gate loop current peak value can be captured and utilized as the junction temperature indicator. The concept and feasibility was verified through both simulation and experimental results.</description><identifier>EISSN: 2329-3748</identifier><identifier>EISBN: 9781479973125</identifier><identifier>EISBN: 1479973122</identifier><identifier>DOI: 10.1109/ECCE.2018.8558298</identifier><language>eng</language><publisher>IEEE</publisher><subject>Gate Driver ; Logic gates ; Resistance ; Signal processing ; Silicon carbide ; Temperature dependence ; Temperature measurement ; Temperature Sensor ; Temperature sensors</subject><ispartof>2018 IEEE Energy Conversion Congress and Exposition (ECCE), 2018, p.387-392</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c223t-7947224ea0b5c49e51e2cd077a05ce80f6de84b12aa9bb3a9773b638a9e8d4dc3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8558298$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,27924,54554,54931</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8558298$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Wang, Ruxi</creatorcontrib><creatorcontrib>Sabate, Juan</creatorcontrib><creatorcontrib>Mainali, Krishna</creatorcontrib><creatorcontrib>Sadilek, Tomas</creatorcontrib><creatorcontrib>Losee, Peter</creatorcontrib><creatorcontrib>Singh, Yash</creatorcontrib><title>SiC Device Junction Temperature Online Monitoring</title><title>2018 IEEE Energy Conversion Congress and Exposition (ECCE)</title><addtitle>ECCE</addtitle><description>This paper presents a SiC device junction temperature monitoring method. The device internal gate resistance has a consistent temperature dependence. With different junction temperature conditions, the equivalent gate loop impedance will be different and change the gate driver currents. Through proper signal processing, this gate loop current peak value can be captured and utilized as the junction temperature indicator. The concept and feasibility was verified through both simulation and experimental results.</description><subject>Gate Driver</subject><subject>Logic gates</subject><subject>Resistance</subject><subject>Signal processing</subject><subject>Silicon carbide</subject><subject>Temperature dependence</subject><subject>Temperature measurement</subject><subject>Temperature Sensor</subject><subject>Temperature sensors</subject><issn>2329-3748</issn><isbn>9781479973125</isbn><isbn>1479973122</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2018</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotz01OwzAQQGGDhERVcgDEJhdI8IzteLxEJvypqAvKunKcKTJqnSpJkbg9C7p6u096QtyCrAGku2-9b2uUQDUZQ-joQhTOEmjrnFWA5lIsUKGrlNV0LYpp-pZSQkNIEhYCPpIvH_knRS7fTjnOacjlhg9HHsN8Grlc533KXL4POc3DmPLXjbjahf3ExblL8fnUbvxLtVo_v_qHVRUR1VxZpy2i5iA7E7VjA4yxl9YGaSKT3DU9k-4AQ3Bdp4KzVnWNouCYet1HtRR3_25i5u1xTIcw_m7Pk-oPYZlEvA</recordid><startdate>201809</startdate><enddate>201809</enddate><creator>Wang, Ruxi</creator><creator>Sabate, Juan</creator><creator>Mainali, Krishna</creator><creator>Sadilek, Tomas</creator><creator>Losee, Peter</creator><creator>Singh, Yash</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201809</creationdate><title>SiC Device Junction Temperature Online Monitoring</title><author>Wang, Ruxi ; Sabate, Juan ; Mainali, Krishna ; Sadilek, Tomas ; Losee, Peter ; Singh, Yash</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c223t-7947224ea0b5c49e51e2cd077a05ce80f6de84b12aa9bb3a9773b638a9e8d4dc3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Gate Driver</topic><topic>Logic gates</topic><topic>Resistance</topic><topic>Signal processing</topic><topic>Silicon carbide</topic><topic>Temperature dependence</topic><topic>Temperature measurement</topic><topic>Temperature Sensor</topic><topic>Temperature sensors</topic><toplevel>online_resources</toplevel><creatorcontrib>Wang, Ruxi</creatorcontrib><creatorcontrib>Sabate, Juan</creatorcontrib><creatorcontrib>Mainali, Krishna</creatorcontrib><creatorcontrib>Sadilek, Tomas</creatorcontrib><creatorcontrib>Losee, Peter</creatorcontrib><creatorcontrib>Singh, Yash</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, Ruxi</au><au>Sabate, Juan</au><au>Mainali, Krishna</au><au>Sadilek, Tomas</au><au>Losee, Peter</au><au>Singh, Yash</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>SiC Device Junction Temperature Online Monitoring</atitle><btitle>2018 IEEE Energy Conversion Congress and Exposition (ECCE)</btitle><stitle>ECCE</stitle><date>2018-09</date><risdate>2018</risdate><spage>387</spage><epage>392</epage><pages>387-392</pages><eissn>2329-3748</eissn><eisbn>9781479973125</eisbn><eisbn>1479973122</eisbn><abstract>This paper presents a SiC device junction temperature monitoring method. The device internal gate resistance has a consistent temperature dependence. With different junction temperature conditions, the equivalent gate loop impedance will be different and change the gate driver currents. Through proper signal processing, this gate loop current peak value can be captured and utilized as the junction temperature indicator. The concept and feasibility was verified through both simulation and experimental results.</abstract><pub>IEEE</pub><doi>10.1109/ECCE.2018.8558298</doi><tpages>6</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier EISSN: 2329-3748
ispartof 2018 IEEE Energy Conversion Congress and Exposition (ECCE), 2018, p.387-392
issn 2329-3748
language eng
recordid cdi_ieee_primary_8558298
source IEEE Xplore All Conference Series
subjects Gate Driver
Logic gates
Resistance
Signal processing
Silicon carbide
Temperature dependence
Temperature measurement
Temperature Sensor
Temperature sensors
title SiC Device Junction Temperature Online Monitoring
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T00%3A35%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=SiC%20Device%20Junction%20Temperature%20Online%20Monitoring&rft.btitle=2018%20IEEE%20Energy%20Conversion%20Congress%20and%20Exposition%20(ECCE)&rft.au=Wang,%20Ruxi&rft.date=2018-09&rft.spage=387&rft.epage=392&rft.pages=387-392&rft.eissn=2329-3748&rft_id=info:doi/10.1109/ECCE.2018.8558298&rft.eisbn=9781479973125&rft.eisbn_list=1479973122&rft_dat=%3Cieee_CHZPO%3E8558298%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c223t-7947224ea0b5c49e51e2cd077a05ce80f6de84b12aa9bb3a9773b638a9e8d4dc3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=8558298&rfr_iscdi=true