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SiC Device Junction Temperature Online Monitoring
This paper presents a SiC device junction temperature monitoring method. The device internal gate resistance has a consistent temperature dependence. With different junction temperature conditions, the equivalent gate loop impedance will be different and change the gate driver currents. Through prop...
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creator | Wang, Ruxi Sabate, Juan Mainali, Krishna Sadilek, Tomas Losee, Peter Singh, Yash |
description | This paper presents a SiC device junction temperature monitoring method. The device internal gate resistance has a consistent temperature dependence. With different junction temperature conditions, the equivalent gate loop impedance will be different and change the gate driver currents. Through proper signal processing, this gate loop current peak value can be captured and utilized as the junction temperature indicator. The concept and feasibility was verified through both simulation and experimental results. |
doi_str_mv | 10.1109/ECCE.2018.8558298 |
format | conference_proceeding |
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The device internal gate resistance has a consistent temperature dependence. With different junction temperature conditions, the equivalent gate loop impedance will be different and change the gate driver currents. Through proper signal processing, this gate loop current peak value can be captured and utilized as the junction temperature indicator. The concept and feasibility was verified through both simulation and experimental results.</description><identifier>EISSN: 2329-3748</identifier><identifier>EISBN: 9781479973125</identifier><identifier>EISBN: 1479973122</identifier><identifier>DOI: 10.1109/ECCE.2018.8558298</identifier><language>eng</language><publisher>IEEE</publisher><subject>Gate Driver ; Logic gates ; Resistance ; Signal processing ; Silicon carbide ; Temperature dependence ; Temperature measurement ; Temperature Sensor ; Temperature sensors</subject><ispartof>2018 IEEE Energy Conversion Congress and Exposition (ECCE), 2018, p.387-392</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c223t-7947224ea0b5c49e51e2cd077a05ce80f6de84b12aa9bb3a9773b638a9e8d4dc3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8558298$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,27924,54554,54931</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8558298$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Wang, Ruxi</creatorcontrib><creatorcontrib>Sabate, Juan</creatorcontrib><creatorcontrib>Mainali, Krishna</creatorcontrib><creatorcontrib>Sadilek, Tomas</creatorcontrib><creatorcontrib>Losee, Peter</creatorcontrib><creatorcontrib>Singh, Yash</creatorcontrib><title>SiC Device Junction Temperature Online Monitoring</title><title>2018 IEEE Energy Conversion Congress and Exposition (ECCE)</title><addtitle>ECCE</addtitle><description>This paper presents a SiC device junction temperature monitoring method. The device internal gate resistance has a consistent temperature dependence. With different junction temperature conditions, the equivalent gate loop impedance will be different and change the gate driver currents. Through proper signal processing, this gate loop current peak value can be captured and utilized as the junction temperature indicator. The concept and feasibility was verified through both simulation and experimental results.</description><subject>Gate Driver</subject><subject>Logic gates</subject><subject>Resistance</subject><subject>Signal processing</subject><subject>Silicon carbide</subject><subject>Temperature dependence</subject><subject>Temperature measurement</subject><subject>Temperature Sensor</subject><subject>Temperature sensors</subject><issn>2329-3748</issn><isbn>9781479973125</isbn><isbn>1479973122</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2018</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotz01OwzAQQGGDhERVcgDEJhdI8IzteLxEJvypqAvKunKcKTJqnSpJkbg9C7p6u096QtyCrAGku2-9b2uUQDUZQ-joQhTOEmjrnFWA5lIsUKGrlNV0LYpp-pZSQkNIEhYCPpIvH_knRS7fTjnOacjlhg9HHsN8Grlc533KXL4POc3DmPLXjbjahf3ExblL8fnUbvxLtVo_v_qHVRUR1VxZpy2i5iA7E7VjA4yxl9YGaSKT3DU9k-4AQ3Bdp4KzVnWNouCYet1HtRR3_25i5u1xTIcw_m7Pk-oPYZlEvA</recordid><startdate>201809</startdate><enddate>201809</enddate><creator>Wang, Ruxi</creator><creator>Sabate, Juan</creator><creator>Mainali, Krishna</creator><creator>Sadilek, Tomas</creator><creator>Losee, Peter</creator><creator>Singh, Yash</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201809</creationdate><title>SiC Device Junction Temperature Online Monitoring</title><author>Wang, Ruxi ; Sabate, Juan ; Mainali, Krishna ; Sadilek, Tomas ; Losee, Peter ; Singh, Yash</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c223t-7947224ea0b5c49e51e2cd077a05ce80f6de84b12aa9bb3a9773b638a9e8d4dc3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Gate Driver</topic><topic>Logic gates</topic><topic>Resistance</topic><topic>Signal processing</topic><topic>Silicon carbide</topic><topic>Temperature dependence</topic><topic>Temperature measurement</topic><topic>Temperature Sensor</topic><topic>Temperature sensors</topic><toplevel>online_resources</toplevel><creatorcontrib>Wang, Ruxi</creatorcontrib><creatorcontrib>Sabate, Juan</creatorcontrib><creatorcontrib>Mainali, Krishna</creatorcontrib><creatorcontrib>Sadilek, Tomas</creatorcontrib><creatorcontrib>Losee, Peter</creatorcontrib><creatorcontrib>Singh, Yash</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, Ruxi</au><au>Sabate, Juan</au><au>Mainali, Krishna</au><au>Sadilek, Tomas</au><au>Losee, Peter</au><au>Singh, Yash</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>SiC Device Junction Temperature Online Monitoring</atitle><btitle>2018 IEEE Energy Conversion Congress and Exposition (ECCE)</btitle><stitle>ECCE</stitle><date>2018-09</date><risdate>2018</risdate><spage>387</spage><epage>392</epage><pages>387-392</pages><eissn>2329-3748</eissn><eisbn>9781479973125</eisbn><eisbn>1479973122</eisbn><abstract>This paper presents a SiC device junction temperature monitoring method. The device internal gate resistance has a consistent temperature dependence. With different junction temperature conditions, the equivalent gate loop impedance will be different and change the gate driver currents. Through proper signal processing, this gate loop current peak value can be captured and utilized as the junction temperature indicator. The concept and feasibility was verified through both simulation and experimental results.</abstract><pub>IEEE</pub><doi>10.1109/ECCE.2018.8558298</doi><tpages>6</tpages></addata></record> |
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identifier | EISSN: 2329-3748 |
ispartof | 2018 IEEE Energy Conversion Congress and Exposition (ECCE), 2018, p.387-392 |
issn | 2329-3748 |
language | eng |
recordid | cdi_ieee_primary_8558298 |
source | IEEE Xplore All Conference Series |
subjects | Gate Driver Logic gates Resistance Signal processing Silicon carbide Temperature dependence Temperature measurement Temperature Sensor Temperature sensors |
title | SiC Device Junction Temperature Online Monitoring |
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